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TBP24SA81J4

Texas Instruments

TBP24SA81J4 by Texas Instruments

TBP24SA81J4 by Texas Instruments is a 2KX4 OTP ROM with 8192-bit memory density and 70ns max access time. It features a ceramic rectangular package with 18 terminals in an in-line style, suitable for commercial-grade TTL technology applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,173 parts In-Stock

1+ parts

-

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8,173

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Digiode

USA . 4,035 parts In-Stock

1+ parts

-

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1k+ parts

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4,035

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,151 parts In-Stock

1+ parts

$4.380

100+ parts

-

1k+ parts

$4.796

10k+ parts

-

1,151

$4.380

-

$4.796

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ChromeModa Solutions

Germany . 4,985 parts In-Stock

1+ parts

$4.921

100+ parts

$4.035

1k+ parts

-

10k+ parts

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4,985

$4.921

$4.035

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IDEA Electronic Components Group

UK . 1,190 parts In-Stock

1+ parts

$4.921

100+ parts

-

1k+ parts

$4.429

10k+ parts

-

1,190

$4.921

-

$4.429

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AZTECH Wire

Italy . 602 parts In-Stock

1+ parts

$17.810

100+ parts

-

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602

$17.810

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One Stop Electronics

USA . 1,502 parts In-Stock

1+ parts

$27.000

100+ parts

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1,502

$27.000

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Corphita

USA . 1,526 parts In-Stock

1+ parts

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1,526

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DigiPath Technology Company

USA . 507 parts In-Stock

1+ parts

-

100+ parts

$4.437

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507

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$4.437

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Overview

Unlock the power of secure and reliable data storage with the TBP24SA81J4 by Texas Instruments. Manufactured with precision and expertise, this OTP ROM chip offers unmatched quality and durability. Ideal for a wide range of applications, this product provides customers with a seamless and efficient solution for their memory needs. Trust in Texas Instruments to deliver exceptional performance and value with the TBP24SA81J4, making it the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide better protection against dust, moisture, and corrosion, making the product more durable and reliable.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature allows the product to function effectively in various environmental conditions without overheating.

Organization: 2KX4

The organization of 2KX4 allows for efficient memory storage and retrieval, enhancing the product's performance.

Technology: TTL

TTL technology offers fast and reliable data transmission, ensuring quick access to information stored in the ROM.

Memory Width: 4

The memory width of 4 indicates the number of bits that can be accessed simultaneously, increasing the speed and efficiency of data processing.

No. of Words: 2048 words

With 2048 words of memory, the ROM can store a significant amount of data, making it suitable for various applications.

Memory Density: 8192 bit

The high memory density of 8192 bits allows for the storage of a large amount of information in a compact space.

Maximum Access Time: 70 ns

The low maximum access time of 70 ns ensures fast retrieval of data, reducing latency and improving overall system performance.

Technical Specifications

OTP ROM TBP24SA81J4 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-XDIP-T18

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

18

No. of Words:

2048 words

No. of Words Code:

2K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX4

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP24SA81J4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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