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5962-01-188-6442

Texas Instruments

5962-01-188-6442 by Texas Instruments

Texas Instruments' 5962-01-188-6442 is a MILITARY-grade OTP ROM with 512X8 organization, 4096-bit memory density, and 85 ns max access time. It operates b/w -55 to 125 °C and has a supply voltage of 5V. Ideal for applications requiring reliable non-volatile memory in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,477 parts In-Stock

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3,477

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Digiode

USA . 2,339 parts In-Stock

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2,339

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Distributors (Availability)

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Northwest PG Solutions

USA . 830 parts In-Stock

1+ parts

$2.702

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830

$2.702

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Parana Technologies

USA . 1,111 parts In-Stock

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$4.095

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$4.552

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1,111

$4.095

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$4.552

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DigiPath Technology Company

USA . 1,849 parts In-Stock

1+ parts

$4.509

100+ parts

$4.148

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1,849

$4.509

$4.148

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ChromeModa Solutions

Germany . 6,612 parts In-Stock

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$4.601

100+ parts

$3.773

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6,612

$4.601

$3.773

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IDEA Electronic Components Group

UK . 353 parts In-Stock

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$4.601

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$4.141

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353

$4.601

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$4.141

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AZTECH Wire

Italy . 616 parts In-Stock

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$8.707

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616

$8.707

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One Stop Electronics

USA . 1,124 parts In-Stock

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$12.000

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Corphita

USA . 2,653 parts In-Stock

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Native Components

USA . 497 parts In-Stock

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$2.382

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Overview

Unlock the power of reliable and high-quality memory solutions with the 5962-01-188-6442 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch performance and durability in their OTP ROM products. Ideal for military-grade applications, this OTP ROM offers fast access time and a wide memory width to meet your data storage needs. Trust Texas Instruments to deliver the value, benefits, and advantages you seek in a memory IC, making your projects run smoothly and efficiently. Choose Texas Instruments for unmatched quality and performance in memory technology.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic offers better thermal performance and durability compared to plastic packages, making it suitable for military applications.

Nominal Supply Voltage / Vsup (V): 5

A stable supply voltage of 5V ensures reliable operation and compatibility with many systems.

No. of Terminals: 20

Sufficient number of terminals for connecting to other components in a system.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows for use in harsh environments.

Organization: 512X8

Organized as 512 words of 8 bits each, providing adequate storage capacity.

Technology: TTL

TTL technology offers fast operation speeds and low power consumption.

Memory Density: 4096 bit

Higher memory density allows for more data storage in a compact package.

Memory IC Type: OTP ROM

One-Time Programmable Read-Only Memory ensures data security and reliability.

Maximum Access Time: 85 ns

Fast access time ensures quick data retrieval for efficient system performance.

Technical Specifications

OTP ROM 5962-01-188-6442 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-188-6442 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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