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SMJ2516-45JM

Texas Instruments

SMJ2516-45JM by Texas Instruments

SMJ2516-45JM by Texas Instruments is a 2KX8 OTP ROM with 16384 bit memory density. It operates at -55 to 125 °C, with 450 ns access time. Commonly used in military applications due to its MIL-38535 screening level and MOS technology.

Median Price

$18.595

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

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Freelance Electronics

USA . 15 parts In-Stock

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$18.595

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$19.524

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$18.409

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Vyrian

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Digiode

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ACDS - Activité Composants Distribution Service

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Bristol Electronics

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Dan-Mar Components

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Electronic Expediters

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Q Components

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LWI Electronics Inc

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Distributors (Availability)

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Parana Technologies

USA . 233 parts In-Stock

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$2.338

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$2.839

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ChromeModa Solutions

Germany . 3,545 parts In-Stock

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IDEA Electronic Components Group

UK . 1,930 parts In-Stock

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AZTECH Wire

Italy . 847 parts In-Stock

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One Stop Electronics

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DigiPath Technology Company

USA . 1,520 parts In-Stock

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Corphita

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Overview

Unlock the power of secure, reliable data storage with the SMJ2516-45JM by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality OTP ROM solutions for a variety of applications. Ideal for military-grade projects, this product offers unmatched performance and durability. With a memory density of 16384 bits and a fast access time of just 450 ns, the SMJ2516-45JM provides customers with the value and reliability they need to succeed. Trust Texas Instruments for all your memory IC needs.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packaging provides excellent thermal properties and durability, making it suitable for military applications where reliability is crucial.

Screening Level: 38535Q/M;38534H;883B

The multiple screening levels ensure that the product meets stringent quality and reliability standards, making it ideal for demanding environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes integration into existing systems easy and convenient.

Organization: 2KX8

The 2KX8 organization allows for efficient storage and retrieval of data, making the ROM an efficient choice for memory applications.

Output Characteristics: 3-STATE

The 3-STATE output allows for multiple devices to be connected to the same output line, increasing flexibility and system design options.

Technology: MOS

MOS technology offers low power consumption and high speed operation, making the ROM energy-efficient and responsive.

Memory Density: 16384 bit

With a memory density of 16384 bits, the ROM offers ample storage capacity for data storage and retrieval requirements.

Maximum Access Time: 450 ns

The fast maximum access time of 450 ns ensures quick data retrieval and processing, enhancing overall system performance.

Technical Specifications

OTP ROM SMJ2516-45JM attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

450 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T24

Memory Density:

16384 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

2048 words

No. of Words Code:

2K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

2KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Programming Voltage (V):

25

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SMJ2516-45JM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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