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JBP28SA42MJ

Texas Instruments

JBP28SA42MJ by Texas Instruments

JBP28SA42MJ by Texas Instruments is a MILITARY-grade OTP ROM with 512x8 organization and 4096-bit memory density. It operates b/w -55°C to 125°C, featuring a max access time of 75ns. Ideal for applications requiring high reliability in harsh environments such as aerospace and defense systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,267 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,267

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Vyrian

USA . 2,826 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,826

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 930 parts In-Stock

1+ parts

$4.358

100+ parts

-

1k+ parts

$4.776

10k+ parts

-

930

$4.358

-

$4.776

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DigiPath Technology Company

USA . 1,970 parts In-Stock

1+ parts

$4.799

100+ parts

$4.415

1k+ parts

-

10k+ parts

-

1,970

$4.799

$4.415

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IDEA Electronic Components Group

UK . 2,364 parts In-Stock

1+ parts

$4.897

100+ parts

-

1k+ parts

$4.407

10k+ parts

-

2,364

$4.897

-

$4.407

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ChromeModa Solutions

Germany . 1,346 parts In-Stock

1+ parts

$4.897

100+ parts

$4.016

1k+ parts

-

10k+ parts

-

1,346

$4.897

$4.016

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-

AZTECH Wire

Italy . 877 parts In-Stock

1+ parts

$5.452

100+ parts

-

1k+ parts

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10k+ parts

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877

$5.452

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One Stop Electronics

USA . 745 parts In-Stock

1+ parts

$24.000

100+ parts

-

1k+ parts

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10k+ parts

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745

$24.000

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Corphita

USA . 3,002 parts In-Stock

1+ parts

-

100+ parts

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3,002

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Overview

Unleash the power of cutting-edge technology with the JBP28SA42MJ from Texas Instruments. Crafted with precision and expertise, this OTP ROM offers unparalleled quality and reliability for a wide range of applications. Whether you're looking to enhance your military-grade systems or boost the performance of your TTL devices, this product delivers exceptional value and benefits. Trust in Texas Instruments to provide you with top-of-the-line solutions that exceed expectations. Elevate your projects with the JBP28SA42MJ today.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body material provides durability and protection to the internal components, ensuring reliability and longevity of the OTP ROM.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this OTP ROM can function optimally even in high-temperature environments, making it suitable for a wide range of applications.

No. of Terminals: 20

Having 20 terminals allows for efficient and effective connections, enabling seamless integration of the OTP ROM into various electronic systems.

Memory Width: 8

With a memory width of 8, this OTP ROM provides sufficient capacity to store and retrieve data efficiently, making it a reliable choice for data storage applications.

Temperature Grade: MILITARY

Being MILITARY-grade ensures that this OTP ROM meets stringent quality and reliability standards required for use in military and aerospace applications where performance and durability are critical.

Technology: TTL

Utilizing TTL technology ensures compatibility with a wide range of electronic systems, making this OTP ROM versatile and easy to integrate.

Technical Specifications

OTP ROM JBP28SA42MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

JBP28SA42MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-228-7029, 5962012287029

NIIN

012287029

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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