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JBP28S86AMJ

Texas Instruments

JBP28S86AMJ by Texas Instruments

JBP28S86AMJ by Texas Instruments is a MILITARY-grade OTP ROM with 1KX8 organization, 8192-bit memory density, and 80ns max access time. It operates b/w -55 to 125 °C and has a supply voltage of 5V. Ideal for applications requiring reliable non-volatile memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,877 parts In-Stock

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Digiode

USA . 3,681 parts In-Stock

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3,681

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Electronic Expediters

USA . 11 parts In-Stock

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Q Components

USA . 3 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 331 parts In-Stock

1+ parts

$2.000

100+ parts

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331

$2.000

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Parana Technologies

USA . 2,359 parts In-Stock

1+ parts

$4.843

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$5.362

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2,359

$4.843

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$5.362

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DigiPath Technology Company

USA . 1,412 parts In-Stock

1+ parts

$5.333

100+ parts

$4.907

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1,412

$5.333

$4.907

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ChromeModa Solutions

Germany . 2,943 parts In-Stock

1+ parts

$5.442

100+ parts

$4.462

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2,943

$5.442

$4.462

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IDEA Electronic Components Group

UK . 2,111 parts In-Stock

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$5.442

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$4.898

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2,111

$5.442

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$4.898

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AZTECH Wire

Italy . 534 parts In-Stock

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$11.362

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534

$11.362

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Corphita

USA . 4,302 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the JBP28S86AMJ by Texas Instruments. As a trusted manufacturer in the industry, Texas Instruments delivers top-quality OTP ROM products that are perfect for a wide range of applications. With its ceramic package body material and military-grade temperature grade, this product ensures reliability and durability. Experience seamless performance and unmatched efficiency with the JBP28S86AMJ, offering customers exceptional value and benefits. Choose Texas Instruments for superior quality and innovation in memory IC technology.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package provides excellent thermal conductivity and stability, enhancing the reliability and longevity of the product.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard supply voltage of 5V makes this OTP ROM compatible with a wide range of systems and easy to integrate.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this OTP ROM can withstand harsh environmental conditions and maintain performance under stress.

Organization: 1KX8

Organized as 1K words by 8 bits, this OTP ROM offers a good balance between memory capacity and data width for various applications.

Technology: TTL

Using TTL technology ensures compatibility with many existing systems and provides reliable performance for data transfer.

Memory IC Type: OTP ROM

Being a One-Time Programmable ROM eliminates the risk of accidental data changes or loss, making it ideal for storing critical information securely.

Maximum Access Time: 80 ns

With a fast access time of 80 ns, this OTP ROM can quickly retrieve data, reducing latency in applications and improving overall system performance.

Technical Specifications

OTP ROM JBP28S86AMJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

80 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

JBP28S86AMJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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