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SNC54S474W

Texas Instruments

SNC54S474W by Texas Instruments

The Texas Instruments SNC54S474W is a MIL-STD-883 Class B OTP ROM with 512x8 organization, 4096-bit memory density, and 85ns max access time. Ideal for military applications due to its MILITARY temperature grade and flatpack package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,749 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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6,749

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Digiode

USA . 902 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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902

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 850 parts In-Stock

1+ parts

$4.192

100+ parts

-

1k+ parts

$4.632

10k+ parts

-

850

$4.192

-

$4.632

-

ChromeModa Solutions

Germany . 5,205 parts In-Stock

1+ parts

$4.710

100+ parts

$3.862

1k+ parts

-

10k+ parts

-

5,205

$4.710

$3.862

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IDEA Electronic Components Group

UK . 1,193 parts In-Stock

1+ parts

$4.710

100+ parts

-

1k+ parts

$4.239

10k+ parts

-

1,193

$4.710

-

$4.239

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AZTECH Wire

Italy . 366 parts In-Stock

1+ parts

$9.607

100+ parts

-

1k+ parts

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10k+ parts

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366

$9.607

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One Stop Electronics

USA . 1,260 parts In-Stock

1+ parts

$11.000

100+ parts

-

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10k+ parts

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1,260

$11.000

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Corphita

USA . 2,881 parts In-Stock

1+ parts

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2,881

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DigiPath Technology Company

USA . 2,155 parts In-Stock

1+ parts

-

100+ parts

$4.247

1k+ parts

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10k+ parts

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2,155

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$4.247

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Overview

Unlock the power of reliable and high-quality memory with the SNC54S474W by Texas Instruments. Manufactured with precision and expertise, this OTP ROM device offers unparalleled performance and durability. Ideal for military-grade applications, this product provides a seamless solution for your memory needs. Trust in Texas Instruments to deliver exceptional value and benefits, ensuring that you have a dependable memory component that meets your requirements. Choose the SNC54S474W for superior quality and peace of mind in your next project.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent durability and thermal conductivity, making this OTP ROM resistant to high temperatures and mechanical stress.

Surface Mount: YES

Being surface mountable makes this OTP ROM easy to integrate into circuit boards, saving space and simplifying assembly processes.

Screening Level: MIL-STD-883 Class B (Modified)

This OTP ROM undergoes rigorous testing and screening processes according to military standards, ensuring high reliability and performance in demanding environmental conditions.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement and routing of traces on PCBs, optimizing space utilization and signal integrity.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this OTP ROM can function reliably in harsh operating conditions without compromising performance.

Memory Density: 4096 bit

High memory density allows for storage of a large number of data and program instructions in a compact form, suitable for various applications.

Technology: TTL

Using TTL technology ensures compatibility with a wide range of digital systems and interfaces, allowing for easy integration and communication with other components.

Technical Specifications

OTP ROM SNC54S474W attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-XDFP-F24

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DFP

Package Equivalence Code:

FL24,.4

Package Shape:

Package Style (Meter):

FLATPACK

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Maximum Supply Current:

155 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Trade Compliance

SNC54S474W Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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