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TBP18S030N

Texas Instruments

TBP18S030N by Texas Instruments

TBP18S030N by Texas Instruments is a 256-bit OTP ROM with 32x8 organization, operating at 5V. It features an access time of 40ns and operates in parallel mode. This rectangular IC, with through-hole terminals, is ideal for commercial applications requiring non-volatile memory storage.

Median Price

$18.175

Lifecycle Status

Suppliers In-Stock

33

In-Stock Inventory

1k+

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Component Electronics Inc.

Canada . 11 parts In-Stock

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$11.540

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$8.650

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American Microsemiconductor Inc.

USA . 22 parts In-Stock

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Vyrian

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ComSIT Distribution GmbH

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ComSIT USA

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Digiode

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Digital Electronic Gebert Verwaltungs UG

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MRC Electronics

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Fibra_Brandt Electronic GMBH

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SPM Sales

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Electronic Expediters

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Zilex Electronics Inc.

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Connector Distribution Corp

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Right Parts Inc.

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Pegasus Components GmbH

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Bristol Electronics

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PC Components Company LLC

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EMSNET

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MISTER SPROCKETS

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Q Components

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LittleDiode

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Prism Electronics

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Manoshevitz Elec. Sales

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ABC Electronics Ltd.

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ACDS - Activité Composants Distribution Service

France . 18 parts In-Stock

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LWI Electronics Inc

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ECAB

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Quantum Digital Technology

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Euro-Tech

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Mentor Electronics Marketing, LLC

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GES GmbH

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Parana Technologies

USA . 188 parts In-Stock

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$4.244

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$4.677

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DigiPath Technology Company

USA . 508 parts In-Stock

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$4.674

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$4.300

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ChromeModa Solutions

Germany . 6,315 parts In-Stock

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IDEA Electronic Components Group

UK . 1,232 parts In-Stock

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$4.292

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AZTECH Wire

Italy . 363 parts In-Stock

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One Stop Electronics

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Lixinc

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A-Z Elektronik GmbH

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Assy Fe

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Corphita

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Perfect Parts

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Kepictronics

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Cyclops Electronics Ltd (Excess)

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Speed Components Ltd (Excess)

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Overview

Unlock the potential of your projects with the TBP18S030N by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality OTP ROM products that offer reliability and performance. Ideal for applications requiring non-volatile memory storage, this product provides a seamless solution with its 32x8 organization and fast access time of 40 ns. Trust in Texas Instruments to provide you with the value and benefits you need to take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance against external factors, making the product long-lasting.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent and flexible communication between devices, enhancing versatility and compatibility.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage provides stable and consistent power to the device, ensuring reliable performance.

Temperature Grade: COMMERCIAL

Being rated for commercial temperature range makes this product suitable for a wide range of applications in normal operating conditions.

Memory IC Type: OTP ROM

The OTP ROM memory type allows for secure and permanent storage of data, ensuring data integrity and reliability.

Technical Specifications

OTP ROM TBP18S030N attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

40 ns

JESD-30 Code:

R-PDIP-T16

Length:

19.305 mm

Memory Density:

256 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

16

No. of Words:

32 words

No. of Words Code:

32

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

OTP ROMs

Maximum Supply Current:

110 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

TBP18S030N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-104-8731, 5962011048731, 5962-01-142-7326, 5962011427326, 5962-01-165-3131, 5962011653131, 5962-01-166-0116, 5962011660116, 5962-01-037-6411, 5962010376411, 5962-01-082-4389, 5962010824389, 5962-01-165-3114, 5962011653114, 5962-01-142-3410, 5962011423410

NIIN

011048731, 011427326, 011653131, 011660116, 010376411, 010824389, 011653114, 011423410

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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