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5962-01-218-8489

Texas Instruments

5962-01-218-8489 by Texas Instruments

Texas Instruments' 5962-01-218-8489 is a 512x8 OTP ROM with 4096-bit memory density. Operating at 5V, it offers a max access time of 75ns and operates in commercial temperature grades. This rectangular ceramic package with 20 terminals is ideal for applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,024 parts In-Stock

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7,024

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Digiode

USA . 534 parts In-Stock

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534

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Distributors (Availability)

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Parana Technologies

USA . 1,072 parts In-Stock

1+ parts

$3.880

100+ parts

$360.354

1k+ parts

$3.492

10k+ parts

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1,072

$3.880

$360.354

$3.492

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DigiPath Technology Company

USA . 1,989 parts In-Stock

1+ parts

$4.273

100+ parts

$3.931

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-

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1,989

$4.273

$3.931

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ChromeModa Solutions

Germany . 3,141 parts In-Stock

1+ parts

$4.360

100+ parts

$3.575

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3,141

$4.360

$3.575

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IDEA Electronic Components Group

UK . 2,064 parts In-Stock

1+ parts

$4.360

100+ parts

-

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$3.924

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2,064

$4.360

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$3.924

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AZTECH Wire

Italy . 437 parts In-Stock

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$6.230

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437

$6.230

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One Stop Electronics

USA . 1,009 parts In-Stock

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$23.000

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1,009

$23.000

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Corphita

USA . 2,059 parts In-Stock

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2,059

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Northwest PG Solutions

USA . 1,680 parts In-Stock

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1,680

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Native Components

USA . 500 parts In-Stock

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500

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Overview

Unlock the power of cutting-edge technology with the 5962-01-218-8489 by Texas Instruments. Known for their high-quality products, Texas Instruments delivers top-notch OTP ROM memory solutions that are perfect for a wide range of applications. With a package body material made of ceramic and a nominal supply voltage of 5V, this product offers reliability and durability. Experience lightning-fast access times and seamless performance with this innovative device. Upgrade your systems today and discover the superior value and benefits that the 5962-01-218-8489 can bring to your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides durability and helps in maintaining stability, making the product suitable for long-term use.

Nominal Supply Voltage / Vsup (V): 5

Operates on commonly available 5V supply voltage, ensuring ease of compatibility with standard power sources.

Maximum Operating Temperature: 70 °C

Can function effectively in relatively high temperatures, expanding the range of possible applications for the product.

Organization: 512X8

Provides a balanced organization of 512 words with a width of 8 bits each, optimizing memory storage and retrieval efficiency.

Technology: TTL

Utilizes Transistor-Transistor Logic technology, known for its high speed and reliability, ensuring efficient performance of the product.

Memory Density: 4096 bit

Offers a high memory density of 4096 bits, enabling the storage of a large amount of data in a compact form factor.

Technical Specifications

OTP ROM 5962-01-218-8489 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-218-8489 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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