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SN74S476N

Texas Instruments

SN74S476N by Texas Instruments

SN74S476N by Texas Instruments is a 5V OTP ROM with 1KX4 organization and 4096-bit memory density. It operates b/w 0-70°C, has 18 terminals in an IN-LINE package style, and uses TTL technology. Ideal for applications requiring non-volatile memory storage in commercial-grade environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,195 parts In-Stock

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3,195

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Digiode

USA . 1,943 parts In-Stock

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Electronic Expediters

USA . 680 parts In-Stock

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680

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GES GmbH

Germany . 12 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 3 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 3 parts In-Stock

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R&J Components

USA . 1 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 579 parts In-Stock

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$3.500

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$4.024

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579

$3.500

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$4.024

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DigiPath Technology Company

USA . 740 parts In-Stock

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$3.854

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$3.546

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740

$3.854

$3.546

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ChromeModa Solutions

Germany . 5,297 parts In-Stock

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$3.933

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$3.225

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$3.933

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IDEA Electronic Components Group

UK . 2,111 parts In-Stock

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$3.933

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$3.540

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2,111

$3.933

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AZTECH Wire

Italy . 702 parts In-Stock

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$15.538

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702

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One Stop Electronics

USA . 464 parts In-Stock

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$25.000

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Corphita

USA . 1,137 parts In-Stock

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Assy Fe

Spain . 103 parts In-Stock

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Overview

Unlock endless possibilities with the SN74S476N from Texas Instruments, a leading manufacturer known for top-quality products. This OTP ROM offers unmatched reliability and performance, making it ideal for a wide range of applications. From industrial automation to consumer electronics, this versatile device provides value and benefits that exceed expectations. Experience the advantage of cutting-edge technology combined with trusted craftsmanship, all in one compact package. Elevate your projects with the SN74S476N and discover the difference Texas Instruments can make for you.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the integrated circuit, ensuring a longer lifespan for the product.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes it compatible with a wide range of systems and applications.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this OTP ROM can function reliably in various environmental conditions.

Organization: 1KX4

The organization of 1KX4 allows for efficient storage and retrieval of data, optimizing the performance of the OTP ROM.

Technology: TTL

Utilizing TTL technology ensures high-speed operation and reliability in data processing, making it a suitable choice for many applications.

Memory Density: 4096 bit

With a memory density of 4096 bits, this OTP ROM offers ample storage capacity for data storage and retrieval needs.

Technical Specifications

OTP ROM SN74S476N attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

JESD-30 Code:

R-PDIP-T18

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

18

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX4

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74S476N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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