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TBP28L86AN

Texas Instruments

TBP28L86AN by Texas Instruments

TBP28L86AN by Texas Instruments is a 1Kx8 OTP ROM with 8192-bit memory density and 110ns max access time. It operates at a nominal voltage of 5V, suitable for commercial temperature grades. This rectangular package with 24 terminals in-line shape is ideal for applications requiring reliable non-volatile memory storage.

Median Price

$27.075

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TEDSS.com

USA . 14 parts In-Stock

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$4.990

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American Microsemiconductor Inc.

USA . 16 parts In-Stock

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$49.160

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Vyrian

USA . 6,742 parts In-Stock

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Digiode

USA . 4,688 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 117 parts In-Stock

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Electronic Expediters

USA . 85 parts In-Stock

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Sogenti Electronics

Canada . 50 parts In-Stock

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ECAB

Sweden . 46 parts In-Stock

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Parana Technologies

USA . 1,422 parts In-Stock

1+ parts

$3.062

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$3.576

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$3.062

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DigiPath Technology Company

USA . 1,353 parts In-Stock

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$3.371

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$3.102

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$3.371

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ChromeModa Solutions

Germany . 6,186 parts In-Stock

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$3.440

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$2.821

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$3.440

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IDEA Electronic Components Group

UK . 2,032 parts In-Stock

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$3.440

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$3.096

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One Stop Electronics

USA . 1,114 parts In-Stock

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$10.000

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AZTECH Wire

Italy . 544 parts In-Stock

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$12.316

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Corphita

USA . 3,773 parts In-Stock

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Assy Fe

Spain . 2,459 parts In-Stock

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Glotronic Ltd.

UK . 26 parts In-Stock

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Overview

Unlock the power of reliable and high-quality memory solutions with the TBP28L86AN by Texas Instruments. As a leader in the industry, Texas Instruments ensures top-notch performance and unmatched durability in every product they create. The TBP28L86AN is perfect for applications requiring secure and non-volatile data storage. With a wide range of benefits and advantages, this OTP ROM offers customers peace of mind knowing their data is safe and easily accessible. Upgrade your memory solution today with Texas Instruments and experience the difference in quality and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the internal components of the OTP ROM, ensuring reliability and durability.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes it compatible with a wide range of standard power supplies, simplifying the integration process.

No. of Terminals: 24

With 24 terminals, this OTP ROM offers sufficient connectivity options for various applications, allowing for versatile usage.

Package Style (Meter): IN-LINE

The in-line package style ensures easy installation and integration into existing circuitry, saving space and simplifying the design implementation.

Organization: 1KX8

The 1KX8 organization means the OTP ROM has a capacity of 1 kilobit with a width of 8 bits per word, providing ample storage for data or program code.

Technology: TTL

Utilizing TTL technology ensures compatibility with other TTL devices, enabling seamless communication and operation in a TTL-based system.

Memory IC Type: OTP ROM

Being an OTP ROM (One-Time Programmable Read-Only Memory) type ensures that the data stored in the memory remains intact and cannot be altered, ideal for secure and permanent storage.

Technical Specifications

OTP ROM TBP28L86AN attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

110 ns

JESD-30 Code:

R-PDIP-T24

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP28L86AN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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