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5962-01-180-4314

Texas Instruments

5962-01-180-4314 by Texas Instruments

Texas Instruments' 5962-01-180-4314 is a MILITARY-grade OTP ROM with 512X8 organization, 4096-bit memory density, and 85ns max access time. Ideal for applications requiring secure non-volatile memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,602 parts In-Stock

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7,602

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Digiode

USA . 2,488 parts In-Stock

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2,488

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Distributors (Availability)

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Parana Technologies

USA . 1,597 parts In-Stock

1+ parts

$3.726

100+ parts

-

1k+ parts

$4.226

10k+ parts

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1,597

$3.726

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$4.226

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ChromeModa Solutions

Germany . 6,107 parts In-Stock

1+ parts

$4.186

100+ parts

$3.433

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-

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6,107

$4.186

$3.433

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IDEA Electronic Components Group

UK . 154 parts In-Stock

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$4.186

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-

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$3.767

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154

$4.186

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$3.767

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AZTECH Wire

Italy . 630 parts In-Stock

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$18.851

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630

$18.851

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One Stop Electronics

USA . 603 parts In-Stock

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$26.000

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603

$26.000

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DigiPath Technology Company

USA . 1,517 parts In-Stock

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$3.774

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1,517

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$3.774

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Corphita

USA . 1,354 parts In-Stock

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Northwest PG Solutions

USA . 1,022 parts In-Stock

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Native Components

USA . 453 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the 5962-01-180-4314 by Texas Instruments. Manufactured with precision and expertise, this OTP ROM offers unparalleled reliability and performance. Ideal for military-grade applications, this device boasts a wide operating temperature range and fast access times. Trust Texas Instruments to deliver top-notch quality and innovation in every product. Upgrade your projects with the 5962-01-180-4314 and experience the difference today.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent thermal conductivity and electrical insulation, making them ideal for high temperature and high performance applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage allows for compatibility with a wide range of systems and components.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this OTP ROM is suitable for use in demanding environments where heat resistance is crucial.

Technology: TTL

Using TTL technology ensures reliable and compatible communication with other TTL components and devices.

Memory Width: 8

With a memory width of 8 bits, this OTP ROM can store and retrieve data efficiently in 8-bit chunks, making it versatile for various applications.

Technical Specifications

OTP ROM 5962-01-180-4314 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-180-4314 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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