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SN74S475NP3

Texas Instruments

SN74S475NP3 by Texas Instruments

SN74S475NP3 by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density. It operates b/w 0-70°C, has a max access time of 75ns, and draws a max supply current of 155mA. Ideal for commercial applications requiring reliable non-volatile memory storage in a compact rectangular package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,129 parts In-Stock

1+ parts

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8,129

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Digiode

USA . 3,636 parts In-Stock

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3,636

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 619 parts In-Stock

1+ parts

$3.382

100+ parts

-

1k+ parts

$3.910

10k+ parts

-

619

$3.382

-

$3.910

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DigiPath Technology Company

USA . 2,018 parts In-Stock

1+ parts

$3.724

100+ parts

$3.426

1k+ parts

-

10k+ parts

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2,018

$3.724

$3.426

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ChromeModa Solutions

Germany . 973 parts In-Stock

1+ parts

$3.800

100+ parts

$3.116

1k+ parts

-

10k+ parts

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973

$3.800

$3.116

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IDEA Electronic Components Group

UK . 846 parts In-Stock

1+ parts

$3.800

100+ parts

-

1k+ parts

$3.420

10k+ parts

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846

$3.800

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$3.420

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AZTECH Wire

Italy . 312 parts In-Stock

1+ parts

$8.507

100+ parts

-

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312

$8.507

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One Stop Electronics

USA . 807 parts In-Stock

1+ parts

$17.000

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807

$17.000

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Corphita

USA . 2,495 parts In-Stock

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2,495

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Overview

Unlock the power of innovation with the Texas Instruments SN74S475NP3 OTP ROM. Designed for reliability and performance, this versatile memory device is perfect for a wide range of applications. With Texas Instruments' reputation for quality and excellence, you can trust in the durability and precision of this product. Experience seamless operation and enhanced efficiency with the SN74S475NP3, providing value and benefits that will elevate your projects to new heights. Whether you're working on consumer electronics, industrial automation, or automotive systems, this OTP ROM is the ideal solution to meet your needs. Elevate your designs with the Texas Instruments SN74S475NP3 and discover the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the product in various operating conditions.

No. of Terminals: 24

Having 24 terminals allows for more connections and flexibility in the use of the product.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C allows the product to function efficiently in a wide range of environments.

Organization: 512X8

The organization of 512X8 provides ample memory capacity and data width for storing and retrieving information effectively.

Technology: TTL

The use of TTL technology ensures high-speed operation and reliable performance of the product.

Memory Density: 4096 bit

With a memory density of 4096 bits, the product can store a large amount of data efficiently.

Memory IC Type: OTP ROM

The OTP ROM memory IC type offers non-volatile memory that is ideal for storing program data securely.

Maximum Access Time: 75 ns

A maximum access time of 75 nanoseconds ensures quick retrieval of data, making the product suitable for high-performance applications.

Technical Specifications

OTP ROM SN74S475NP3 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-PDIP-T24

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Sub-Category:

OTP ROMs

Maximum Supply Current:

155 mA

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SN74S475NP3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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