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CBP18SA030MJ

Texas Instruments

CBP18SA030MJ by Texas Instruments

CBP18SA030MJ by Texas Instruments is a MIL-STD-883 Class B OTP ROM with 32x8 organization, 50ns max access time, and 110mA max supply current. Ideal for military applications requiring reliable memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,467 parts In-Stock

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Digiode

USA . 145 parts In-Stock

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145

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Distributors (Availability)

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Native Components

USA . 232 parts In-Stock

1+ parts

$0.162

100+ parts

-

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$0.155

232

$0.162

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$0.155

Northwest PG Solutions

USA . 1,689 parts In-Stock

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$0.178

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$0.157

1,689

$0.178

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$0.157

Parana Technologies

USA . 674 parts In-Stock

1+ parts

$4.056

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$4.518

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674

$4.056

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$4.518

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IDEA Electronic Components Group

UK . 1,473 parts In-Stock

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$4.557

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$4.101

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1,473

$4.557

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$4.101

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ChromeModa Solutions

Germany . 1,053 parts In-Stock

1+ parts

$4.557

100+ parts

$3.737

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1,053

$4.557

$3.737

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AZTECH Wire

Italy . 771 parts In-Stock

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$6.132

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771

$6.132

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One Stop Electronics

USA . 664 parts In-Stock

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$27.000

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664

$27.000

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DigiPath Technology Company

USA . 779 parts In-Stock

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$4.109

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779

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Corphita

USA . 582 parts In-Stock

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Overview

Enhance your projects with the high-quality CBP18SA030MJ from Texas Instruments. As a leader in the industry, Texas Instruments ensures top-notch reliability and performance. This OTP ROM device is perfect for military-grade applications, offering fast access times and low power consumption. Trust in Texas Instruments to provide the value and benefits you need for your next project.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package provides excellent thermal conductivity and stability, ensuring reliable performance in a wide range of operating temperatures.

Screening Level: MIL-STD-883 Class B (Modified)

Compliance with MIL-STD-883 Class B ensures high quality and reliability of the product, making it suitable for military and other high-demand applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes this OTP ROM compatible with many existing systems and easy to integrate into new designs.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement and connection of the OTP ROM in circuit layouts, saving space and simplifying installation.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this OTP ROM can withstand high temperature environments, making it suitable for industrial and automotive applications.

Technology: TTL

Using TTL technology ensures fast and reliable data transmission, making this OTP ROM ideal for applications requiring high-speed operation.

Technical Specifications

OTP ROM CBP18SA030MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

50 ns

JESD-30 Code:

R-XDIP-T16

Memory IC Type:

Memory Width:

8

No. of Terminals:

16

No. of Words:

32 words

No. of Words Code:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

32X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Maximum Supply Current:

110 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

CBP18SA030MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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