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CBP18S030MJ

Texas Instruments

CBP18S030MJ by Texas Instruments

The Texas Instruments CBP18S030MJ is a MIL-STD-883 Class B OTP ROM with 32x8 organization, 50ns access time, and 16 terminals. It operates b/w -55 to 125°C and has a supply voltage of 5V. Ideal for military applications requiring reliable non-volatile memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 9,443 parts In-Stock

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Digiode

USA . 1,613 parts In-Stock

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Electronic Expediters

USA . 3 parts In-Stock

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Parana Technologies

USA . 1,645 parts In-Stock

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$2.940

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$3.439

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One Stop Electronics

USA . 318 parts In-Stock

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$3.000

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318

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IDEA Electronic Components Group

UK . 1,237 parts In-Stock

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$3.303

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$2.973

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ChromeModa Solutions

Germany . 1,202 parts In-Stock

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$3.303

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$2.708

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$3.303

$2.708

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AZTECH Wire

Italy . 862 parts In-Stock

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$10.035

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Corphita

USA . 1,297 parts In-Stock

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Native Components

USA . 333 parts In-Stock

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DigiPath Technology Company

USA . 107 parts In-Stock

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$2.978

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Northwest PG Solutions

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Overview

Discover the unbeatable quality and reliability of the Texas Instruments CBP18S030MJ OTP ROM. Manufactured by industry leader Texas Instruments, this ceramic-packaged memory chip offers military-grade performance with a wide range of applications. From aerospace to defense, this high-speed memory solution provides customers with unmatched value, benefits, and advantages. Upgrade your systems with the best in class technology from Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body provides durability and high thermal conductivity, making it suitable for military applications where reliability is crucial.

Screening Level: MIL-STD-883 Class B (Modified)

Meeting MIL-STD-883 Class B standards ensures high quality and reliability of the product, making it suitable for demanding military and aerospace applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage allows for compatibility with common systems and circuits.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this OTP ROM can withstand harsh environmental conditions, ensuring reliability in extreme temperatures.

Organization: 32X8

With an organization of 32 words by 8 bits, this OTP ROM offers sufficient memory capacity and data width for various applications.

Technology: TTL

Using TTL technology ensures compatibility and ease of integration with other TTL logic circuits, making it a versatile choice for digital systems.

Maximum Access Time: 50 ns

With a fast maximum access time of 50 ns, this OTP ROM allows for quick retrieval of data, suitable for applications requiring high-speed operation.

Technical Specifications

OTP ROM CBP18S030MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

50 ns

JESD-30 Code:

R-XDIP-T16

Memory IC Type:

Memory Width:

8

No. of Terminals:

16

No. of Words:

32 words

No. of Words Code:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

32X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Maximum Supply Current:

110 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

CBP18S030MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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