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CBP18SA46MJ

Texas Instruments

CBP18SA46MJ by Texas Instruments

The Texas Instruments CBP18SA46MJ is a MIL-STD-883 Class B OTP ROM with 512x8 organization and 4096-bit memory density. It operates b/w -55°C to 125°C, has a max access time of 85ns, and consumes up to 155mA. Ideal for military applications requiring reliable non-volatile memory in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,455 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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8,455

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Digiode

USA . 235 parts In-Stock

1+ parts

-

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235

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 36 parts In-Stock

1+ parts

$0.272

100+ parts

-

1k+ parts

-

10k+ parts

$0.261

36

$0.272

-

-

$0.261

Northwest PG Solutions

USA . 159 parts In-Stock

1+ parts

$0.299

100+ parts

-

1k+ parts

-

10k+ parts

$0.264

159

$0.299

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-

$0.264

Parana Technologies

USA . 809 parts In-Stock

1+ parts

$4.147

100+ parts

$385.066

1k+ parts

$3.732

10k+ parts

-

809

$4.147

$385.066

$3.732

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DigiPath Technology Company

USA . 163 parts In-Stock

1+ parts

$4.566

100+ parts

$4.201

1k+ parts

-

10k+ parts

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163

$4.566

$4.201

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ChromeModa Solutions

Germany . 2,626 parts In-Stock

1+ parts

$4.659

100+ parts

$3.820

1k+ parts

-

10k+ parts

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2,626

$4.659

$3.820

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IDEA Electronic Components Group

UK . 628 parts In-Stock

1+ parts

$4.659

100+ parts

-

1k+ parts

$4.193

10k+ parts

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628

$4.659

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$4.193

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AZTECH Wire

Italy . 241 parts In-Stock

1+ parts

$13.259

100+ parts

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241

$13.259

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One Stop Electronics

USA . 593 parts In-Stock

1+ parts

$20.000

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593

$20.000

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Corphita

USA . 77 parts In-Stock

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77

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Overview

Unlock endless possibilities with the CBP18SA46MJ by Texas Instruments, a cutting-edge OTP ROM that offers unparalleled quality and reliability. Manufactured by the renowned Texas Instruments, this device guarantees top-notch performance and durability. Ideal for military-grade applications, this product is designed to withstand extreme temperatures and harsh environments. Experience seamless operation and fast access times with this 512x8 memory IC type. Invest in the CBP18SA46MJ today and elevate your project to new heights with its unmatched value and benefits.

Feature Benefit Bullets

Package Body Material: CERAMIC

The ceramic package provides excellent protection for the OTP ROM, ensuring durability and reliability in harsh operating environments.

Screening Level: MIL-STD-883 Class B (Modified)

Meeting MIL-STD-883 Class B standards guarantees high quality and performance of the OTP ROM, making it suitable for military and aerospace applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this OTP ROM can function effectively in extreme heat conditions without any performance degradation.

Memory IC Type: OTP ROM

The OTP (One-Time Programmable) ROM technology ensures that data stored in the memory is secure and cannot be altered, making it ideal for storing critical information securely.

Maximum Access Time: 85 ns

The fast access time of 85 ns allows for quick retrieval of data from the OTP ROM, enhancing the overall performance of the device.

Technical Specifications

OTP ROM CBP18SA46MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Maximum Supply Current:

155 mA

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

CBP18SA46MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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