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JBP28L86AMJ

Texas Instruments

JBP28L86AMJ by Texas Instruments

JBP28L86AMJ by Texas Instruments is a MILITARY-grade OTP ROM with 1KX8 organization, 8192 bit memory density, and 175 ns max access time. It operates b/w -55 to 125 °C and has a supply voltage of 5V. Ideal for applications requiring reliable non-volatile memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,025 parts In-Stock

1+ parts

-

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4,025

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Digiode

USA . 3,299 parts In-Stock

1+ parts

-

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-

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3,299

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Manoshevitz Elec. Sales

Israel . 12 parts In-Stock

1+ parts

-

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-

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12

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Electronic Expediters

USA . 8 parts In-Stock

1+ parts

-

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8

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 347 parts In-Stock

1+ parts

$3.131

100+ parts

-

1k+ parts

$3.653

10k+ parts

-

347

$3.131

-

$3.653

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DigiPath Technology Company

USA . 1,326 parts In-Stock

1+ parts

$3.448

100+ parts

$3.172

1k+ parts

-

10k+ parts

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1,326

$3.448

$3.172

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ChromeModa Solutions

Germany . 4,768 parts In-Stock

1+ parts

$3.518

100+ parts

$2.885

1k+ parts

-

10k+ parts

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4,768

$3.518

$2.885

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IDEA Electronic Components Group

UK . 2,152 parts In-Stock

1+ parts

$3.518

100+ parts

-

1k+ parts

$3.166

10k+ parts

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2,152

$3.518

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$3.166

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AZTECH Wire

Italy . 275 parts In-Stock

1+ parts

$6.940

100+ parts

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275

$6.940

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One Stop Electronics

USA . 723 parts In-Stock

1+ parts

$27.000

100+ parts

-

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723

$27.000

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Corphita

USA . 2,544 parts In-Stock

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2,544

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Overview

Experience the superior quality and reliability of Texas Instruments with the JBP28L86AMJ OTP ROM. This military-grade memory IC offers unmatched performance in a wide range of applications, from aerospace to defense systems. With a Nominal Supply Voltage of 5V and a maximum operating temperature of 125°C, this product delivers exceptional value and benefits to customers seeking high-quality memory solutions. Trust Texas Instruments for cutting-edge technology and dependable products that exceed expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body material provides excellent durability and thermal stability, making the product more reliable in harsh environments.

Nominal Supply Voltage / Vsup (V): 5

Having a nominal supply voltage of 5V ensures compatibility with standard power supplies, making integration into existing systems easier.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this product can withstand high heat conditions, making it suitable for industrial and military applications.

Organization: 1KX8

Organized as 1Kx8, this OTP ROM offers a total capacity of 1024 words with a memory width of 8, providing sufficient storage for data and code in embedded systems.

Technology: TTL

Using TTL technology ensures fast and reliable data transfer, making this OTP ROM an efficient choice for applications requiring high-speed performance.

Memory Density: 8192 bit

With a memory density of 8192 bits, this OTP ROM can store a large amount of data in a compact form factor, saving space in system designs.

Technical Specifications

OTP ROM JBP28L86AMJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

175 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

JBP28L86AMJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-218-9268, 5962012189268, 5962-01-217-9458, 5962012179458

NIIN

012189268, 012179458

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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