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JBP24S81-55MJ

Texas Instruments

JBP24S81-55MJ by Texas Instruments

JBP24S81-55MJ by Texas Instruments is a MILITARY-grade OTP ROM with 2KX4 organization, 8192-bit memory density, and 55ns max access time. It operates b/w -55°C to 125°C, making it suitable for rugged environments requiring fast and reliable non-volatile memory solutions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,359 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,359

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-

-

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Vyrian

USA . 2,836 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,836

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 370 parts In-Stock

1+ parts

$3.741

100+ parts

-

1k+ parts

$4.239

10k+ parts

-

370

$3.741

-

$4.239

-

DigiPath Technology Company

USA . 76 parts In-Stock

1+ parts

$4.119

100+ parts

-

1k+ parts

-

10k+ parts

-

76

$4.119

-

-

-

ChromeModa Solutions

Germany . 6,250 parts In-Stock

1+ parts

$4.203

100+ parts

$3.446

1k+ parts

-

10k+ parts

-

6,250

$4.203

$3.446

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-

IDEA Electronic Components Group

UK . 140 parts In-Stock

1+ parts

$4.203

100+ parts

-

1k+ parts

$3.783

10k+ parts

-

140

$4.203

-

$3.783

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AZTECH Wire

Italy . 879 parts In-Stock

1+ parts

$13.019

100+ parts

-

1k+ parts

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10k+ parts

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879

$13.019

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-

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One Stop Electronics

USA . 940 parts In-Stock

1+ parts

$21.000

100+ parts

-

1k+ parts

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10k+ parts

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940

$21.000

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Corphita

USA . 4,395 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,395

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Overview

Experience unparalleled quality and reliability with the JBP24S81-55MJ by Texas Instruments. As a leader in the industry, Texas Instruments delivers top-notch OTP ROM products that are ideal for military-grade applications. With a memory density of 8192 bits and a maximum access time of 55 ns, this product offers superior performance and efficiency. Trust in Texas Instruments to provide you with the cutting-edge technology you need for your projects. Elevate your designs with the JBP24S81-55MJ and experience the difference today.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide higher reliability and improved thermal performance, making this OTP ROM suitable for harsh operating environments.

Screening Level: 38535Q/M;38534H;883B

This OTP ROM has undergone rigorous testing and screening processes to ensure high quality and reliability.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this OTP ROM can perform reliably in a wide range of operating conditions.

Technology: TTL

TTL technology offers fast and efficient data processing, making this OTP ROM suitable for applications that require quick response times.

Memory Density: 8192 bit

With a high memory density, this OTP ROM can store a large amount of data in a compact package.

Technical Specifications

OTP ROM JBP24S81-55MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

55 ns

JESD-30 Code:

R-XDIP-T18

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

18

No. of Words:

2048 words

No. of Words Code:

2K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

2KX4

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Maximum Supply Current:

175 mA

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

JBP24S81-55MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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