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TBP24SA81JP4

Texas Instruments

TBP24SA81JP4 by Texas Instruments

TBP24SA81JP4 by Texas Instruments is a 2Kx4 OTP ROM with 8192-bit memory density and 70ns max access time. It features a ceramic rectangular package with 18 terminals in an in-line style, suitable for commercial temperature grade applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,548 parts In-Stock

1+ parts

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3,548

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Digiode

USA . 2,224 parts In-Stock

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2,224

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 733 parts In-Stock

1+ parts

$2.383

100+ parts

-

1k+ parts

$2.882

10k+ parts

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733

$2.383

-

$2.882

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DigiPath Technology Company

USA . 224 parts In-Stock

1+ parts

$2.624

100+ parts

$2.414

1k+ parts

-

10k+ parts

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224

$2.624

$2.414

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ChromeModa Solutions

Germany . 6,011 parts In-Stock

1+ parts

$2.678

100+ parts

$2.196

1k+ parts

-

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6,011

$2.678

$2.196

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IDEA Electronic Components Group

UK . 1,306 parts In-Stock

1+ parts

$2.678

100+ parts

-

1k+ parts

$2.410

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1,306

$2.678

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$2.410

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One Stop Electronics

USA . 373 parts In-Stock

1+ parts

$9.000

100+ parts

-

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373

$9.000

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AZTECH Wire

Italy . 459 parts In-Stock

1+ parts

$11.303

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459

$11.303

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Corphita

USA . 3,536 parts In-Stock

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Overview

Enhance your electronic projects with the TBP24SA81JP4 OTP ROM from Texas Instruments, a trusted manufacturer known for delivering high-quality components. This versatile device is perfect for a wide range of applications, offering reliability and performance that will exceed your expectations. With its durable ceramic body and 2Kx4 organization, this OTP ROM provides ample memory capacity while maintaining a compact design. Trust in Texas Instruments to provide you with the technology you need to bring your ideas to life. Elevate your projects today with the TBP24SA81JP4.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package provides excellent thermal conductivity, aiding in heat dissipation and ensuring reliability in various operating conditions.

No. of Terminals: 18

Sufficient number of terminals allow for connection to external circuitry and peripherals, enhancing versatility and functionality.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this OTP ROM can be used in a wide range of environments without risk of overheating.

Organization: 2KX4

The organization of 2KX4 allows for efficient data storage and retrieval, maximizing the memory capacity of the OTP ROM.

Technology: TTL

TTL technology offers fast signal processing and low power consumption, leading to efficient operation and improved performance of the OTP ROM.

No. of Words: 2048 words

The large number of words ensures ample storage capacity for data and instructions, making this OTP ROM suitable for a variety of applications.

Memory IC Type: OTP ROM

Being a OTP ROM (One-Time Programmable Read-Only Memory) ensures that the data stored in the memory is secure and cannot be altered, making it ideal for applications requiring permanent data storage.

Maximum Access Time: 70 ns

With a fast maximum access time, this OTP ROM allows for quick read operations, minimizing delays and improving overall system performance.

Technical Specifications

OTP ROM TBP24SA81JP4 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-XDIP-T18

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

18

No. of Words:

2048 words

No. of Words Code:

2K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX4

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP24SA81JP4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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