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TBP24SA10NP3

Texas Instruments

TBP24SA10NP3 by Texas Instruments

TBP24SA10NP3 by Texas Instruments is a 256x4 OTP ROM with 1024-bit memory density. It operates at 5V, has a max access time of 65ns, and features a dual-terminal position. This device is ideal for commercial applications requiring fast and reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,496 parts In-Stock

1+ parts

-

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1k+ parts

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7,496

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Digiode

USA . 4,892 parts In-Stock

1+ parts

-

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4,892

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 409 parts In-Stock

1+ parts

$5.176

100+ parts

-

1k+ parts

$5.778

10k+ parts

-

409

$5.176

-

$5.778

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DigiPath Technology Company

USA . 1,557 parts In-Stock

1+ parts

$5.700

100+ parts

-

1k+ parts

-

10k+ parts

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1,557

$5.700

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ChromeModa Solutions

Germany . 4,380 parts In-Stock

1+ parts

$5.816

100+ parts

$4.769

1k+ parts

-

10k+ parts

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4,380

$5.816

$4.769

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IDEA Electronic Components Group

UK . 522 parts In-Stock

1+ parts

$5.816

100+ parts

-

1k+ parts

$5.234

10k+ parts

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522

$5.816

-

$5.234

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AZTECH Wire

Italy . 326 parts In-Stock

1+ parts

$9.324

100+ parts

-

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10k+ parts

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326

$9.324

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One Stop Electronics

USA . 1,064 parts In-Stock

1+ parts

$12.000

100+ parts

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1,064

$12.000

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Corphita

USA . 1,357 parts In-Stock

1+ parts

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1,357

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Overview

Unlock the power of reliable and high-quality memory solutions with the TBP24SA10NP3 by Texas Instruments. As a trusted manufacturer in the industry, Texas Instruments delivers cutting-edge OTP ROM technology that ensures superior performance and durability. Ideal for a wide range of applications, this product offers customers exceptional value and benefits, including fast access times, low power consumption, and a compact design. Upgrade your electronic devices with the TBP24SA10NP3 and experience the advantage of top-notch memory solutions from a leading provider in the market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good durability and protection for the internal components of the OTP ROM, ensuring long-term reliability.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes this OTP ROM compatible with a wide range of systems and devices.

Organization: 256X4

The 256X4 organization allows for efficient data storage and retrieval, making this OTP ROM suitable for applications requiring a balance of capacity and performance.

Temperature Grade: COMMERCIAL

Designed for commercial use, this OTP ROM can reliably operate within standard temperature ranges, making it ideal for a variety of everyday applications.

Memory IC Type: OTP ROM

Being an OTP (One-Time Programmable) ROM ensures that the stored data is secure and cannot be altered once programmed, making it a secure choice for critical data storage needs.

Technical Specifications

OTP ROM TBP24SA10NP3 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

65 ns

JESD-30 Code:

R-PDIP-T16

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

16

No. of Words:

256 words

No. of Words Code:

256

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X4

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Sub-Category:

OTP ROMs

Maximum Supply Current:

100 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP24SA10NP3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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