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TBP24S10NP3

Texas Instruments

TBP24S10NP3 by Texas Instruments

TBP24S10NP3 by Texas Instruments is a 256x4 OTP ROM with 1024-bit memory density. It operates at a supply voltage of 5V and has a max access time of 55ns. This IC, in an IN-LINE package style, is ideal for applications requiring non-volatile memory storage in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,467 parts In-Stock

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9,467

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Digiode

USA . 2,267 parts In-Stock

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2,267

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,838 parts In-Stock

1+ parts

$3.208

100+ parts

$297.953

1k+ parts

$2.888

10k+ parts

-

1,838

$3.208

$297.953

$2.888

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DigiPath Technology Company

USA . 153 parts In-Stock

1+ parts

$3.533

100+ parts

$3.250

1k+ parts

-

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153

$3.533

$3.250

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ChromeModa Solutions

Germany . 1,179 parts In-Stock

1+ parts

$3.605

100+ parts

$2.956

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1,179

$3.605

$2.956

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IDEA Electronic Components Group

UK . 762 parts In-Stock

1+ parts

$3.605

100+ parts

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$3.244

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762

$3.605

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$3.244

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One Stop Electronics

USA . 1,602 parts In-Stock

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$10.000

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1,602

$10.000

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AZTECH Wire

Italy . 777 parts In-Stock

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$17.469

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777

$17.469

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Corphita

USA . 1,876 parts In-Stock

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1,876

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Overview

Unlock the power of reliable and high-quality memory with the TBP24S10NP3 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch products that exceed expectations. This OTP ROM device offers customers a valuable solution for various applications, providing fast access time, low power consumption, and a wide temperature range for optimal performance. Trust in the quality and innovation of Texas Instruments to enhance your next project with the TBP24S10NP3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for various applications.

Nominal Supply Voltage / Vsup (V): 5

Standard and stable voltage supply for reliable operation.

No. of Terminals: 16

Sufficient terminals for connecting to external devices.

Maximum Operating Temperature: 70 °C

Can operate in a wide range of temperatures, suitable for different environments.

Organization: 256X4

Efficient organization of memory cells for optimal performance.

Technology: TTL

Uses TTL technology for fast and reliable data transfer.

Memory IC Type: OTP ROM

One-Time Programmable Read-Only Memory for secure and permanent storage of data.

Maximum Access Time: 55 ns

Quick access time for efficient data retrieval.

Technical Specifications

OTP ROM TBP24S10NP3 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

55 ns

JESD-30 Code:

R-PDIP-T16

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

16

No. of Words:

256 words

No. of Words Code:

256

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X4

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Sub-Category:

OTP ROMs

Maximum Supply Current:

100 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP24S10NP3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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