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CBP28S42MJ

Texas Instruments

CBP28S42MJ by Texas Instruments

The Texas Instruments CBP28S42MJ is a MIL-STD-883 Class B OTP ROM with 512x8 organization, 4096-bit memory density, and 60ns max access time. Ideal for military applications requiring reliable data storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,077 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,077

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Digiode

USA . 1,839 parts In-Stock

1+ parts

-

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-

1k+ parts

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1,839

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,377 parts In-Stock

1+ parts

$2.990

100+ parts

-

1k+ parts

$3.496

10k+ parts

-

1,377

$2.990

-

$3.496

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DigiPath Technology Company

USA . 651 parts In-Stock

1+ parts

$3.293

100+ parts

$3.029

1k+ parts

-

10k+ parts

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651

$3.293

$3.029

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ChromeModa Solutions

Germany . 3,461 parts In-Stock

1+ parts

$3.360

100+ parts

$2.755

1k+ parts

-

10k+ parts

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3,461

$3.360

$2.755

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IDEA Electronic Components Group

UK . 1,352 parts In-Stock

1+ parts

$3.360

100+ parts

-

1k+ parts

$3.024

10k+ parts

-

1,352

$3.360

-

$3.024

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Native Components

USA . 752 parts In-Stock

1+ parts

$14.248

100+ parts

-

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10k+ parts

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752

$14.248

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Northwest PG Solutions

USA . 581 parts In-Stock

1+ parts

$15.673

100+ parts

$14.106

1k+ parts

-

10k+ parts

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581

$15.673

$14.106

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AZTECH Wire

Italy . 231 parts In-Stock

1+ parts

$17.789

100+ parts

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231

$17.789

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One Stop Electronics

USA . 1,580 parts In-Stock

1+ parts

$26.000

100+ parts

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1,580

$26.000

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Corphita

USA . 2,921 parts In-Stock

1+ parts

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2,921

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Overview

Unlock the power of cutting-edge technology with the CBP28S42MJ by Texas Instruments. This OTP ROM offers unparalleled quality and reliability, backed by the trusted manufacturer's reputation for excellence. Ideal for military-grade applications, this device boasts a wide range of benefits, including fast access times and superior memory density. Experience the value of top-tier performance with the CBP28S42MJ – the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body material provides outstanding durability and reliability, making this OTP ROM suitable for rugged environments and long-term use.

Nominal Supply Voltage: 5V

Operating at a standard 5V supply voltage ensures compatibility with many existing systems and makes integration easier.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this OTP ROM can perform reliably in demanding thermal conditions.

Organization: 512X8

The 512X8 organization provides a good balance of capacity and access speed, suitable for storing and retrieving moderate amounts of data efficiently.

Technology: TTL

Being based on TTL technology ensures fast and reliable signal processing, making this OTP ROM ideal for applications requiring quick access times.

Technical Specifications

OTP ROM CBP28S42MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

60 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

CBP28S42MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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