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CBP28S166-55MJ

Texas Instruments

CBP28S166-55MJ by Texas Instruments

CBP28S166-55MJ by Texas Instruments is a MILITARY-grade OTP ROM with 2KX8 organization, 16384-bit memory density, and 55ns max access time. It operates b/w -55 to 125 °C and has a supply voltage of 5V. Ideal for military applications requiring reliable non-volatile memory solutions in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,837 parts In-Stock

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4,837

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Digiode

USA . 3,025 parts In-Stock

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3,025

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Distributors (Availability)

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Parana Technologies

USA . 1,653 parts In-Stock

1+ parts

$3.819

100+ parts

-

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$4.308

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1,653

$3.819

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$4.308

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DigiPath Technology Company

USA . 319 parts In-Stock

1+ parts

$4.205

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319

$4.205

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ChromeModa Solutions

Germany . 2,545 parts In-Stock

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$4.291

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$3.519

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2,545

$4.291

$3.519

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IDEA Electronic Components Group

UK . 2,090 parts In-Stock

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$4.291

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$3.862

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2,090

$4.291

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$3.862

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One Stop Electronics

USA . 304 parts In-Stock

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$17.000

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304

$17.000

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AZTECH Wire

Italy . 827 parts In-Stock

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$18.766

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827

$18.766

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Corphita

USA . 4,963 parts In-Stock

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Northwest PG Solutions

USA . 2,124 parts In-Stock

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Native Components

USA . 723 parts In-Stock

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Overview

Upgrade your electronic devices with the CBP28S166-55MJ by Texas Instruments, a top-quality OTP ROM memory IC that offers unparalleled performance and reliability. Manufactured by industry leader Texas Instruments, this product is designed to meet MILITARY standards, ensuring durability and consistency in extreme conditions. With a wide range of applications in military and aerospace technology, this OTP ROM memory IC provides 2048 words of memory density, 55 ns maximum access time, and 2KX8 organization, making it a versatile and efficient choice for your projects. Trust Texas Instruments for cutting-edge technology that delivers exceptional value and performance.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent thermal performance, high reliability, and durability, making it a great choice for applications where these factors are critical.

Screening Level: MIL-STD-883 Class B (Modified)

This higher screening level ensures that the product meets stringent quality standards and reliability requirements, making it suitable for demanding military or aerospace applications.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage is a common standard in many systems, ensuring compatibility and ease of integration.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this product can withstand harsh environmental conditions without compromising performance.

Organization: 2KX8

This organization of 2Kx8 means that the memory is organized as 2 kilobytes with each word being 8 bits wide, providing a good balance of storage capacity and data width for various applications.

Technology: TTL

TTL technology offers fast operation and reliable performance, making it suitable for applications that require high-speed data transfer and processing.

Memory IC Type: OTP ROM

OTP ROM (One-Time Programmable Read-Only Memory) provides secure and non-volatile storage of data that cannot be altered or reprogrammed, ensuring data integrity and reliability.

Maximum Access Time: 55 ns

With a fast maximum access time of 55 nanoseconds, this product can quickly retrieve data, enhancing overall system performance and responsiveness.

Technical Specifications

OTP ROM CBP28S166-55MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

55 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

16384 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

2048 words

No. of Words Code:

2K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

2KX8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

CBP28S166-55MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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