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CBP28L86MJ

Texas Instruments

CBP28L86MJ by Texas Instruments

The Texas Instruments CBP28L86MJ is a MIL-STD-883 Class B OTP ROM with 1KX8 organization and 8192-bit memory density. It operates at temperatures ranging from -55 to 125 °C, with a max access time of 175 ns. Ideal for military applications requiring reliable non-volatile memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,992 parts In-Stock

1+ parts

-

100+ parts

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3,992

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Digiode

USA . 3,385 parts In-Stock

1+ parts

-

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3,385

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 185 parts In-Stock

1+ parts

$0.899

100+ parts

-

1k+ parts

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185

$0.899

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Northwest PG Solutions

USA . 1,927 parts In-Stock

1+ parts

$0.989

100+ parts

-

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1,927

$0.989

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One Stop Electronics

USA . 414 parts In-Stock

1+ parts

$1.000

100+ parts

-

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414

$1.000

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Parana Technologies

USA . 1,529 parts In-Stock

1+ parts

$2.159

100+ parts

-

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$2.672

10k+ parts

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1,529

$2.159

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$2.672

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DigiPath Technology Company

USA . 134 parts In-Stock

1+ parts

$2.377

100+ parts

$2.187

1k+ parts

-

10k+ parts

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134

$2.377

$2.187

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IDEA Electronic Components Group

UK . 1,674 parts In-Stock

1+ parts

$2.426

100+ parts

-

1k+ parts

$2.183

10k+ parts

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1,674

$2.426

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$2.183

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ChromeModa Solutions

Germany . 673 parts In-Stock

1+ parts

$2.426

100+ parts

$1.989

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-

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673

$2.426

$1.989

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AZTECH Wire

Italy . 558 parts In-Stock

1+ parts

$18.006

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558

$18.006

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Corphita

USA . 2,412 parts In-Stock

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2,412

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Overview

Discover the superior quality and reliability of the CBP28L86MJ by Texas Instruments, a leading manufacturer in the industry. This OTP ROM offers unparalleled performance and durability for military-grade applications, ensuring seamless operation even in extreme conditions. With a memory density of 8192 bits and a maximum access time of 175 ns, this product provides customers with unmatched value and benefits. Trust in Texas Instruments to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages offer excellent thermal conductivity and durability, making them ideal for military-grade applications where reliability is paramount.

Screening Level: MIL-STD-883 Class B (Modified)

Adhering to MIL-STD-883 Class B standards ensures high quality and reliability, making this OTP ROM suitable for stringent military and aerospace applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal 5V supply voltage is common in many systems, ensuring compatibility and ease of integration with existing electronics.

Organization: 1KX8

With an organization of 1KX8, this OTP ROM can store up to 1024 words of 8 bits each, providing sufficient memory capacity for various data storage applications.

Memory IC Type: OTP ROM

Being a One-Time Programmable Read-Only Memory (OTP ROM) ensures data security as the programmed information cannot be altered, making it suitable for storing critical firmware or configuration data.

Technical Specifications

OTP ROM CBP28L86MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

175 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

CBP28L86MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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