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CBP28SA166MJ

Texas Instruments

CBP28SA166MJ by Texas Instruments

The Texas Instruments CBP28SA166MJ is a MIL-STD-883 Class B OTP ROM with 2KX8 organization and 16384-bit memory density. It operates b/w -55 to 125 °C, has a max access time of 80 ns, and is ideal for military-grade applications requiring fast and reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,937 parts In-Stock

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6,937

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Digiode

USA . 3,284 parts In-Stock

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3,284

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Distributors (Availability)

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Native Components

USA . 364 parts In-Stock

1+ parts

$1.525

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-

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364

$1.525

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Northwest PG Solutions

USA . 1,496 parts In-Stock

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$1.677

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1,496

$1.677

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Parana Technologies

USA . 224 parts In-Stock

1+ parts

$3.397

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$3.924

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224

$3.397

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$3.924

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ChromeModa Solutions

Germany . 5,717 parts In-Stock

1+ parts

$3.817

100+ parts

$3.130

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5,717

$3.817

$3.130

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IDEA Electronic Components Group

UK . 1,429 parts In-Stock

1+ parts

$3.817

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-

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$3.435

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1,429

$3.817

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$3.435

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One Stop Electronics

USA . 415 parts In-Stock

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$7.000

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415

$7.000

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AZTECH Wire

Italy . 338 parts In-Stock

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$17.629

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338

$17.629

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DigiPath Technology Company

USA . 1,207 parts In-Stock

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$3.441

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$3.441

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Corphita

USA . 785 parts In-Stock

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785

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Overview

Discover the CBP28SA166MJ by Texas Instruments, a top-quality OTP ROM that offers unrivaled reliability and performance. With a MIL-STD-883 Class B screening level, this product is built to excel in military-grade applications. The 2Kx8 organization and 2048 words memory width ensure optimal functionality, while the -55 to 125°C operating temperature range guarantees versatility in harsh environments. Trust Texas Instruments for cutting-edge technology and precision engineering. Upgrade your systems with the CBP28SA166MJ and experience superior quality and durability like never before.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent protection for the internal components of the OTP ROM, ensuring durability and reliability in various environments.

Screening Level: MIL-STD-883 Class B (Modified)

The modified MIL-STD-883 Class B screening level ensures that the OTP ROM meets stringent military standards for performance and quality.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this OTP ROM can handle high temperature environments without compromising performance.

Organization: 2KX8

The 2KX8 organization allows for efficient data storage and retrieval, making the OTP ROM suitable for a wide range of applications.

Technology: TTL

The TTL technology used in this OTP ROM ensures fast and reliable data transfer, making it ideal for high-performance systems.

Memory Density: 16384 bit

With a memory density of 16384 bits, this OTP ROM offers ample storage capacity for storing critical data and programs.

Memory IC Type: OTP ROM

Being a OTP ROM, this product provides secure and permanent storage of data, making it suitable for applications where data integrity is crucial.

Maximum Access Time: 80 ns

The maximum access time of 80 nanoseconds ensures fast data access, enhancing the overall performance of the OTP ROM.

Technical Specifications

OTP ROM CBP28SA166MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

80 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

16384 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

2048 words

No. of Words Code:

2K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

2KX8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

CBP28SA166MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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