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CBP28L22MJ

Texas Instruments

CBP28L22MJ by Texas Instruments

CBP28L22MJ by Texas Instruments is a MIL-STD-883 Class B OTP ROM with 256x8 organization, 2048-bit memory density, and 75ns access time. Ideal for military applications due to its MILITARY temperature grade and CERAMIC package material. Operates b/w -55°C to 125°C, making it suitable for rugged environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,931 parts In-Stock

1+ parts

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2,931

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Vyrian

USA . 2,293 parts In-Stock

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2,293

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,224 parts In-Stock

1+ parts

$4.808

100+ parts

-

1k+ parts

$5.319

10k+ parts

-

1,224

$4.808

-

$5.319

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DigiPath Technology Company

USA . 934 parts In-Stock

1+ parts

$5.294

100+ parts

-

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934

$5.294

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IDEA Electronic Components Group

UK . 1,762 parts In-Stock

1+ parts

$5.402

100+ parts

-

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$4.862

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1,762

$5.402

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$4.862

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ChromeModa Solutions

Germany . 411 parts In-Stock

1+ parts

$5.402

100+ parts

$4.430

1k+ parts

-

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411

$5.402

$4.430

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AZTECH Wire

Italy . 371 parts In-Stock

1+ parts

$9.782

100+ parts

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371

$9.782

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Native Components

USA . 76 parts In-Stock

1+ parts

$17.540

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76

$17.540

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Northwest PG Solutions

USA . 1,643 parts In-Stock

1+ parts

$19.294

100+ parts

$17.365

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1,643

$19.294

$17.365

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One Stop Electronics

USA . 1,163 parts In-Stock

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$21.000

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$21.000

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Corphita

USA . 4,255 parts In-Stock

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Overview

Discover the Texas Instruments CBP28L22MJ, a high-quality OTP ROM that offers exceptional performance and reliability. With Texas Instruments' reputation for excellence in manufacturing, this device is guaranteed to meet the highest standards. Ideal for military-grade applications, this OTP ROM features a 256x8 organization and a maximum access time of 75 ns. Trust in the CBP28L22MJ to deliver seamless operation in even the most demanding environments, providing customers with a reliable solution that exceeds expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides better durability and thermal conductivity, ensuring the product can withstand harsh operating conditions.

Screening Level: MIL-STD-883 Class B (Modified)

Meeting military screening standards ensures reliability and performance consistency in demanding applications.

Nominal Supply Voltage / Vsup (V): 5

Standard operating voltage of 5V makes it compatible with a wide range of systems.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows the product to function reliably in extreme temperature conditions.

Technology: TTL

TTL technology offers high-speed performance and low power consumption, making it suitable for various applications.

Memory IC Type: OTP ROM

OTP ROM provides non-volatile memory storage for data that needs to be permanently programmed, ensuring data integrity and security.

Technical Specifications

OTP ROM CBP28L22MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

256 words

No. of Words Code:

256

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

256X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

CBP28L22MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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