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JBP24S41MJ

Texas Instruments

JBP24S41MJ by Texas Instruments

JBP24S41MJ by Texas Instruments is a MILITARY-grade OTP ROM with 1KX4 organization, 4096-bit memory density, and 75ns max access time. It operates b/w -55 to 125 °C and has a supply voltage of 5V. Ideal for applications requiring fast and reliable non-volatile memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,140 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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4,140

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Digiode

USA . 2,533 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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2,533

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Electronic Expediters

USA . 39 parts In-Stock

1+ parts

-

100+ parts

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39

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,325 parts In-Stock

1+ parts

$2.053

100+ parts

-

1k+ parts

$2.575

10k+ parts

-

1,325

$2.053

-

$2.575

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DigiPath Technology Company

USA . 2,159 parts In-Stock

1+ parts

$2.261

100+ parts

$2.080

1k+ parts

-

10k+ parts

-

2,159

$2.261

$2.080

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ChromeModa Solutions

Germany . 2,811 parts In-Stock

1+ parts

$2.307

100+ parts

$1.892

1k+ parts

-

10k+ parts

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2,811

$2.307

$1.892

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IDEA Electronic Components Group

UK . 1,320 parts In-Stock

1+ parts

$2.307

100+ parts

-

1k+ parts

$2.076

10k+ parts

-

1,320

$2.307

-

$2.076

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One Stop Electronics

USA . 883 parts In-Stock

1+ parts

$7.000

100+ parts

-

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10k+ parts

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883

$7.000

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AZTECH Wire

Italy . 675 parts In-Stock

1+ parts

$18.872

100+ parts

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675

$18.872

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Corphita

USA . 3,180 parts In-Stock

1+ parts

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3,180

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Overview

Unlock the power of reliable data storage with the JBP24S41MJ by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers unmatched quality and precision in their OTP ROM products. This versatile device is perfect for a wide range of applications, offering customers a seamless experience with its durable ceramic package body material and military-grade temperature grade. Experience the value and efficiency that this product brings to your projects, providing you with peace of mind and superior performance every time. Elevate your work with the trusted reliability of Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent protection against environmental factors such as moisture and corrosion, making this OTP ROM highly durable and reliable.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage ensures compatibility with a wide range of systems and devices, making it easy to integrate this OTP ROM.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this OTP ROM can reliably function in high-temperature environments without any performance degradation.

Memory Density: 4096 bit

With a memory density of 4096 bit, this OTP ROM can store a large amount of data efficiently, making it suitable for various applications.

Maximum Access Time: 75 ns

The fast access time of 75 ns ensures quick data retrieval, making this OTP ROM ideal for applications that require rapid response times.

Technical Specifications

OTP ROM JBP24S41MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-XDIP-T18

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

18

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX4

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

JBP24S41MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-242-6201, 5962012426201

NIIN

012426201

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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