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JBP28L22MJ

Texas Instruments

JBP28L22MJ by Texas Instruments

JBP28L22MJ by Texas Instruments is a 256x8 OTP ROM with 2048-bit memory density. Operating at 5V, it has a max access time of 75ns and operates in parallel mode. Ideal for military applications due to its MIL-graded temperature range of -55°C to 125°C.

Median Price

$32.020

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 106 parts In-Stock

1+ parts

$32.020

100+ parts

$30.100

1k+ parts

$27.220

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106

$32.020

$30.100

$27.220

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Digiode

USA . 1,213 parts In-Stock

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$30.419

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Vyrian

USA . 3,916 parts In-Stock

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Chip Stock

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LWI Electronics Inc

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MRC Electronics

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ECAB

Sweden . 11 parts In-Stock

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MISTER SPROCKETS

USA . 9 parts In-Stock

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Bristol Electronics

USA . 5 parts In-Stock

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NexGen Digital

USA . 3 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 2 parts In-Stock

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Resion

USA . 2 parts In-Stock

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Q Components

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Parana Technologies

USA . 2,296 parts In-Stock

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$2.431

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$2.928

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$2.431

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$2.928

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DigiPath Technology Company

USA . 998 parts In-Stock

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$2.676

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998

$2.676

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ChromeModa Solutions

Germany . 1,396 parts In-Stock

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$2.731

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$2.239

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IDEA Electronic Components Group

UK . 811 parts In-Stock

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$2.731

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$2.458

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811

$2.731

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AZTECH Wire

Italy . 414 parts In-Stock

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$21.530

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Corphita

USA . 289 parts In-Stock

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$28.818

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$28.818

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A-Z Elektronik GmbH

Germany . 5,039 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,359 parts In-Stock

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Kepictronics

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A-Plus Industry Inc.

USA . 4 parts In-Stock

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Overview

Unlock the power of reliable data storage with the Texas Instruments JBP28L22MJ OTP ROM. Manufactured by a trusted leader in semiconductor technology, this ceramic, glass-sealed package offers unparalleled quality and durability. Ideal for military-grade applications, this asynchronous operating mode device provides 256x8 memory organization with a fast access time of 75 ns. With a nominal supply voltage of 5V, this versatile product ensures seamless performance in a compact package style. Trust Texas Instruments for top-notch technology that delivers exceptional value and performance to meet your unique needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package body material provides durability and protection for the OTP ROM, ensuring reliable operation in various environments.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and independent operation of the OTP ROM, enhancing its versatility and compatibility with different systems.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this OTP ROM can withstand high temperatures, making it suitable for applications in harsh environmental conditions.

Technology: BIPOLAR

The bipolar technology used in this OTP ROM ensures fast and reliable operation, making it a preferred choice for high-performance applications.

Memory IC Type: OTP ROM

Being an OTP ROM (One-Time Programmable Read-Only Memory) ensures that the data stored in this memory is permanent and can't be changed, providing security and stability for critical information.

Technical Specifications

OTP ROM JBP28L22MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-GDIP-T20

Length:

24.195 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

20

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

256X8

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

5.08 mm

Sub-Category:

OTP ROMs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

JBP28L22MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-179-8108, 5962011798108, 5962-01-292-2117, 5962012922117, 5962-01-119-4703, 5962011194703, 5962-01-203-4282, 5962012034282, 5962-01-305-8478, 5962013058478, 5962-01-298-4430, 5962012984430, 5962-01-298-3517, 5962012983517, 5962-14-435-3406, 5962144353406

NIIN

011798108, 012922117, 011194703, 012034282, 013058478, 012984430, 012983517, 144353406

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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