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AT27BV512-70TU

Microchip Technology

AT27BV512-70TU by Microchip Technology

AT27BV512-70TU by Microchip Technology is a 64KX8 OTP ROM with 3-STATE output, operating at -40 to 85 °C. It has a supply voltage of 2.7-3.6V and max access time of 70ns. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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VNN

France . 1,105 parts In-Stock

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Digiode

USA . 721 parts In-Stock

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Vyrian

USA . 173 parts In-Stock

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Nova Conductors

Japan . 75 parts In-Stock

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Corohmni

South Africa . 613 parts In-Stock

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$2.551

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Advanced Electronics

New Zealand . 600 parts In-Stock

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$5.583

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Ampacity Inc.

Singapore . 1,645 parts In-Stock

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$21.000

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LOOK Integrated Logistics

Peru . 6,907 parts In-Stock

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Microchip USA

USA . 5,628 parts In-Stock

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Andel Nordic

Denmark . 5,598 parts In-Stock

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Argo Parts USA

USA . 5,447 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,144 parts In-Stock

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LMD Electronica

Estonia . 3,634 parts In-Stock

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Glotronic Ltd.

UK . 3,500 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,429 parts In-Stock

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NIA Electronics

USA . 3,075 parts In-Stock

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Continental Prestige Electronics

USA . 2,677 parts In-Stock

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Supply Digital

USA . 1,986 parts In-Stock

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Ledger Components

France . 1,423 parts In-Stock

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Montano Global Distributors

Canada . 1,412 parts In-Stock

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Corphita

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Aranea Global

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Overview

Unlock the power of reliable and efficient data storage with the AT27BV512-70TU by Microchip Technology. As a leading manufacturer in the industry, Microchip Technology delivers unmatched quality and performance in their OTP ROM products. Ideal for a wide range of applications, this versatile device offers customers the value of secure and long-lasting memory solutions. Experience the benefits of seamless operation, fast access times, and low power consumption with the AT27BV512-70TU. Trust Microchip Technology to provide you with cutting-edge technology that enhances your projects and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good durability and protection for the internal components of the OTP ROM.

Surface Mount: YES

Allows for easy and secure installation on circuit boards, saving space and simplifying assembly.

Operating Mode: ASYNCHRONOUS

Provides flexibility in communication with other components and devices.

Nominal Supply Voltage / Vsup (V): 3

Compatible with common power supply voltages, ensuring easy integration into existing systems.

No. of Terminals: 28

Provides ample connectivity options for interfacing with other components and devices.

Maximum Operating Temperature: 85 °C

Suitable for use in a wide range of operating environments, including industrial settings.

Memory Width: 8

Offers a standard memory width for efficient data storage and retrieval.

Technology: CMOS

Utilizes efficient CMOS technology for low power consumption and reliable performance.

Maximum Access Time: 70 ns

Provides fast access to stored data for quick and efficient processing.

Technical Specifications

OTP ROM AT27BV512-70TU attributes and parameters. Explore more OTP ROM devices from Microchip Technology

Specs

Maximum Access Time:

70 ns

Additional Features:

ALSO OPERATES AT 5V SUPPLY

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G28

JESD-609 Code:

e3

Length:

11.8 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

28

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP28,.53,22

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00002 Amp

Sub-Category:

OTP ROMs

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.55 mm

Terminal Position:

DUAL

Width:

8 mm

Trade Compliance

AT27BV512-70TU Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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