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TBP18S42JP4

Texas Instruments

TBP18S42JP4 by Texas Instruments

The Texas Instruments TBP18S42JP4 is a 512x8 OTP ROM with 4096-bit memory density and 75ns max access time. It operates at a nominal voltage of 5V, suitable for commercial temperature grades. This rectangular ceramic package with 20 terminals in an in-line style is ideal for applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,049 parts In-Stock

1+ parts

-

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7,049

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Digiode

USA . 4,782 parts In-Stock

1+ parts

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4,782

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,583 parts In-Stock

1+ parts

$2.900

100+ parts

-

1k+ parts

$3.394

10k+ parts

-

1,583

$2.900

-

$3.394

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DigiPath Technology Company

USA . 1,933 parts In-Stock

1+ parts

$3.193

100+ parts

$2.937

1k+ parts

-

10k+ parts

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1,933

$3.193

$2.937

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ChromeModa Solutions

Germany . 731 parts In-Stock

1+ parts

$3.258

100+ parts

$2.672

1k+ parts

-

10k+ parts

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731

$3.258

$2.672

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IDEA Electronic Components Group

UK . 691 parts In-Stock

1+ parts

$3.258

100+ parts

-

1k+ parts

$2.932

10k+ parts

-

691

$3.258

-

$2.932

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AZTECH Wire

Italy . 381 parts In-Stock

1+ parts

$7.794

100+ parts

-

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381

$7.794

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One Stop Electronics

USA . 1,603 parts In-Stock

1+ parts

$17.000

100+ parts

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1,603

$17.000

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Corphita

USA . 4,744 parts In-Stock

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4,744

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Overview

Experience top-tier quality and reliability with the TBP18S42JP4 by Texas Instruments, a leading manufacturer in the industry. This OTP ROM memory device offers unmatched value with its high performance and versatile applications. Whether you're looking to enhance your electronics project or streamline your data storage needs, this product delivers exceptional benefits and advantages. Trust in Texas Instruments for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC

The ceramic package body material offers excellent durability and reliability, ensuring the long-term performance and protection of the OTP ROM chip inside.

Nominal Supply Voltage / Vsup (V): 5

Operating at a 5V supply voltage makes this OTP ROM compatible with a wide range of systems and ensures stable and efficient performance.

Organization: 512X8

With an organization of 512 words by 8 bits, this OTP ROM provides ample storage capacity for data and instructions, making it suitable for various applications.

Technology: TTL

Utilizing TTL technology ensures fast and reliable data transfer within the OTP ROM, making it ideal for applications that require quick access to memory.

Maximum Access Time: 75 ns

The maximum access time of 75 ns ensures quick retrieval of data from the OTP ROM, improving overall system performance and responsiveness.

Technical Specifications

OTP ROM TBP18S42JP4 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TBP18S42JP4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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