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TBP18S030JP4

Texas Instruments

TBP18S030JP4 by Texas Instruments

TBP18S030JP4 by Texas Instruments is a 32x8 OTP ROM with 5V supply, 40ns access time, and 110mA max supply current. It is ideal for commercial applications requiring non-volatile memory storage in a ceramic rectangular package with through-hole terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,942 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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5,942

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Digiode

USA . 1,601 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,601

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 714 parts In-Stock

1+ parts

$4.859

100+ parts

$451.269

1k+ parts

$4.373

10k+ parts

-

714

$4.859

$451.269

$4.373

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DigiPath Technology Company

USA . 2,305 parts In-Stock

1+ parts

$5.351

100+ parts

$4.923

1k+ parts

-

10k+ parts

-

2,305

$5.351

$4.923

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IDEA Electronic Components Group

UK . 2,238 parts In-Stock

1+ parts

$5.460

100+ parts

-

1k+ parts

$4.914

10k+ parts

-

2,238

$5.460

-

$4.914

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ChromeModa Solutions

Germany . 3 parts In-Stock

1+ parts

$5.460

100+ parts

$4.477

1k+ parts

-

10k+ parts

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3

$5.460

$4.477

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-

AZTECH Wire

Italy . 785 parts In-Stock

1+ parts

$12.249

100+ parts

-

1k+ parts

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785

$12.249

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-

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One Stop Electronics

USA . 130 parts In-Stock

1+ parts

$28.000

100+ parts

-

1k+ parts

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10k+ parts

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130

$28.000

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-

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Corphita

USA . 2,370 parts In-Stock

1+ parts

-

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2,370

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Overview

Unlock the power of reliable data storage with the TBP18S030JP4 by Texas Instruments. Crafted with precision in a ceramic package, this OTP ROM offers unparalleled quality and durability. Perfect for a range of applications, this memory IC provides a seamless user experience while delivering exceptional performance. Trust Texas Instruments to bring you cutting-edge technology that meets your needs, offering value and benefits that go beyond expectations. Elevate your projects with the TBP18S030JP4 and experience the difference today.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent heat dissipation and high durability, making the product reliable for long-term use.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage ensures compatibility with a wide range of systems and applications.

Organization: 32X8

With a 32x8 organization, this OTP ROM offers efficient data storage and retrieval capabilities for various computing tasks.

Technology: TTL

Being based on TTL technology, the OTP ROM provides fast response times and low power consumption, ideal for high-speed applications.

Maximum Access Time: 40 ns

The fast access time of 40 nanoseconds ensures quick data retrieval, enhancing overall system performance.

Technical Specifications

OTP ROM TBP18S030JP4 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

40 ns

JESD-30 Code:

R-XDIP-T16

Memory IC Type:

Memory Width:

8

No. of Terminals:

16

No. of Words:

32 words

No. of Words Code:

32

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Sub-Category:

OTP ROMs

Maximum Supply Current:

110 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP18S030JP4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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