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TBP24SA81J

Texas Instruments

TBP24SA81J by Texas Instruments

TBP24SA81J by Texas Instruments is a 2KX4 OTP ROM with 8192 bit memory density. Operating at 5V, it offers a max access time of 70ns and operates in parallel mode. This rectangular package with ceramic body material is ideal for commercial applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,775 parts In-Stock

1+ parts

-

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6,775

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Digiode

USA . 2,155 parts In-Stock

1+ parts

-

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2,155

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 768 parts In-Stock

1+ parts

$5.069

100+ parts

-

1k+ parts

$5.638

10k+ parts

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768

$5.069

-

$5.638

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DigiPath Technology Company

USA . 972 parts In-Stock

1+ parts

$5.581

100+ parts

$5.135

1k+ parts

-

10k+ parts

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972

$5.581

$5.135

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IDEA Electronic Components Group

UK . 2,239 parts In-Stock

1+ parts

$5.695

100+ parts

-

1k+ parts

$5.126

10k+ parts

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2,239

$5.695

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$5.126

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ChromeModa Solutions

Germany . 247 parts In-Stock

1+ parts

$5.695

100+ parts

$4.670

1k+ parts

-

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247

$5.695

$4.670

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One Stop Electronics

USA . 784 parts In-Stock

1+ parts

$7.000

100+ parts

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784

$7.000

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AZTECH Wire

Italy . 738 parts In-Stock

1+ parts

$8.312

100+ parts

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738

$8.312

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Corphita

USA . 2,553 parts In-Stock

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2,553

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Overview

Experience the superior quality and reliability of Texas Instruments with the TBP24SA81J OTP ROM. This innovative product offers unmatched performance and efficiency, making it ideal for a wide range of applications. From industrial automation to consumer electronics, this device provides exceptional value and benefits to customers seeking a dependable memory solution. Trust in Texas Instruments to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package body material provides durability and protection for the OTP ROM, ensuring it can withstand various environmental conditions.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent operation of the memory cells, providing flexibility and efficient data retrieval.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage ensures stable and reliable performance of the OTP ROM.

Organization: 2KX4

The 2KX4 organization means the OTP ROM has a capacity of 2K words with a width of 4 bits, offering a good balance between storage capacity and data retrieval speed.

Technology: BIPOLAR

The bipolar technology used in the OTP ROM ensures efficient operation and low power consumption, making it a cost-effective and reliable choice.

Technical Specifications

OTP ROM TBP24SA81J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-GDIP-T18

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

18

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX4

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

OTP ROMs

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

TBP24SA81J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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