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TBP24S10N

Texas Instruments

TBP24S10N by Texas Instruments

TBP24S10N by Texas Instruments is a 256x4 OTP ROM with 1024-bit memory density. Operating at 5V, it offers a max access time of 55ns and consumes up to 100mA. This rectangular package IC, suitable for commercial applications, features parallel technology and through-hole terminals.

Median Price

$7.500

Lifecycle Status

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1k+

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Freelance Electronics

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Ace Electronics

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American Microsemiconductor Inc.

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Vyrian

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ABC Electronics Ltd.

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Digital Electronic Gebert Verwaltungs UG

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MRC Electronics

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Bristol Electronics

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Sogenti Electronics

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M&R Communications

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Electronics Depot

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First Choice Components Inc.

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Beltway Electronics Company

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Sensible Micro Corp

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PAR Electronics

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Sunrise Surplus Inc.

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Mentor Electronics Marketing, LLC

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Standard Data Resources

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Manoshevitz Elec. Sales

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One Stop Electronics

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Parana Technologies

USA . 1,399 parts In-Stock

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DigiPath Technology Company

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ChromeModa Solutions

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IDEA Electronic Components Group

UK . 357 parts In-Stock

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AZTECH Wire

Italy . 427 parts In-Stock

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Lixinc

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Infinite Electronics LLP (Excess)

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Overview

Get ready to experience the unmatched quality and reliability of Texas Instruments with the TBP24S10N OTP ROM. Designed for a wide range of applications, this versatile memory IC offers seamless operation in an asynchronous mode. With 256X4 organization and a memory density of 1024 bits, this product delivers efficient performance without compromising on speed. Whether you're looking to enhance your industrial equipment or streamline your consumer electronics, the TBP24S10N provides the value, benefits, and advantages you need to take your products to the next level. Trust Texas Instruments for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the OTP ROM, ensuring long-lasting performance.

Operating Mode: ASYNCHRONOUS

The asynchronous operation allows for independent and flexible access to data, making it versatile for various applications.

Nominal Supply Voltage / Vsup (V): 5

With a nominal supply voltage of 5V, the OTP ROM can operate efficiently and reliably within standard power supply levels.

Organization: 256X4

The 256X4 organization offers a good balance between storage capacity and data retrieval speed, making it suitable for a wide range of applications.

Technology: BIPOLAR

The bipolar technology used in the OTP ROM ensures high-speed performance and reliable data processing capabilities.

Technical Specifications

OTP ROM TBP24S10N attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

55 ns

JESD-30 Code:

R-PDIP-T16

Length:

19.305 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

16

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X4

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

OTP ROMs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

TBP24S10N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-127-5795, 5962011275795

NIIN

011275795

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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