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ER5911/P

Microchip Technology

ER5911/P by Microchip Technology

ER5911/P by Microchip Technology is an OTP ROM with 128x8 organization, 1024-bit memory density, and 10000 write/erase cycles. It operates at 5V, has a temperature range of 0-70°C, and features synchronous operation. Ideal for applications requiring reliable non-volatile memory storage in commercial-grade environments.

Median Price

$3.862

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 23,768 parts In-Stock

1+ parts

-

100+ parts

$3.090

1k+ parts

$2.760

10k+ parts

$2.600

23,768

-

$3.090

$2.760

$2.600

DigiKey

USA . 23,768 parts In-Stock

1+ parts

-

100+ parts

$4.060

1k+ parts

-

10k+ parts

-

23,768

-

$4.060

-

-

Verical

USA . 18,768 parts In-Stock

1+ parts

-

100+ parts

$3.862

1k+ parts

$3.450

10k+ parts

$3.250

18,768

-

$3.862

$3.450

$3.250

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 6,340 parts In-Stock

1+ parts

-

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6,340

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J & M Industries LLC

USA . 43 parts In-Stock

1+ parts

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43

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Nova Conductors

Japan . 15 parts In-Stock

1+ parts

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15

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Prism Electronics

USA . 2 parts In-Stock

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2

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Q Components

USA . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 639 parts In-Stock

1+ parts

$2.105

100+ parts

-

1k+ parts

-

10k+ parts

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639

$2.105

-

-

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Ampacity Inc.

Singapore . 31,269 parts In-Stock

1+ parts

$2.930

100+ parts

-

1k+ parts

-

10k+ parts

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31,269

$2.930

-

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Argo Parts USA

USA . 4,696 parts In-Stock

1+ parts

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100+ parts

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4,696

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-

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Continental Prestige Electronics

USA . 3,426 parts In-Stock

1+ parts

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3,426

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Fulton Briggs Corp.

USA . 936 parts In-Stock

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936

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Netroflash

USA . 100 parts In-Stock

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100

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Overview

Unleash the power of reliable data storage with the ER5911/P by Microchip Technology. As a leader in the industry, Microchip Technology has crafted this OTP ROM to deliver unparalleled quality and performance. Ideal for applications requiring secure and permanent memory solutions, this product offers peace of mind with its software write protection feature and endurance of up to 10,000 write/erase cycles. Experience the benefits of seamless operation, compact design, and versatile compatibility. Upgrade your system with the ER5911/P and trust in Microchip Technology to provide cutting-edge solutions for your technological needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product long-lasting.

Operating Mode: SYNCHRONOUS

Allows for efficient and synchronized operation, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage level, ensuring compatibility with common power sources.

No. of Terminals: 8

Offers sufficient connectivity options for integration with other systems or components.

Organization: 128X8

Provides a balanced organization of memory cells, optimizing data storage and retrieval.

Temperature Grade: COMMERCIAL

Suitable for typical commercial environments, ensuring reliable performance under standard conditions.

Memory IC Type: OTP ROM

One-Time Programmable Read-Only Memory offers secure and permanent data storage, ideal for critical information.

Technical Specifications

OTP ROM ER5911/P attributes and parameters. Explore more OTP ROM devices from Microchip Technology

Specs

Additional Features:

AUTOMATIC WRITE

Alternate Memory Width:

16

Minimum Data Retention Time:

10

Endurance:

10000 Write/Erase Cycles

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e0

Length:

9.8425 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

128 words

No. of Words Code:

128

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128X8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Standby Current:

.003 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

12 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

NMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Write Protection:

SOFTWARE

Trade Compliance

ER5911/P Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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