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JBP18S030MJ

Texas Instruments

JBP18S030MJ by Texas Instruments

JBP18S030MJ by Texas Instruments is a 256-bit OTP ROM with 32x8 organization, operating at 5V. It features a max access time of 50ns and operates in MILITARY temperature grade. Suitable for applications requiring reliable non-volatile memory storage in harsh environments.

Median Price

$47.869

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

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Avnet

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Ace Electronics

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Freelance Electronics

USA . 6 parts In-Stock

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$47.869

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$50.262

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$47.390

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Bristol Electronics

USA . 4 parts In-Stock

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$48.000

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Digiode

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Vyrian

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ComSIT Distribution GmbH

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Prism Electronics

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LWI Electronics Inc

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Odintec Ltd.

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Electronics Depot

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Sogenti Electronics

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Microfarads

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Sunrise Surplus Inc.

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North Shore Components

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Inland Empire Components Inc.

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Parana Technologies

USA . 1,362 parts In-Stock

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$3.084

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$3.600

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ChromeModa Solutions

Germany . 3,303 parts In-Stock

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$2.841

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IDEA Electronic Components Group

UK . 46 parts In-Stock

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AZTECH Wire

Italy . 1,199 parts In-Stock

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Corphita

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DigiPath Technology Company

USA . 2,076 parts In-Stock

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Microchip USA

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Metaverse IC Inc.

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Overview

Experience unparalleled quality and reliability with the Texas Instruments JBP18S030MJ OTP ROM. With a MILITARY-grade temperature rating and a 32X8 organization, this memory IC offers seamless operation in even the most demanding environments. Perfect for applications requiring fast access times and low power consumption, this rectangular package is a game-changer for your project. Trust Texas Instruments to deliver cutting-edge technology that exceeds your expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package provides durability and protection for the OTP ROM, making it reliable in various operating conditions.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for efficient and independent operation of the OTP ROM, enhancing its performance.

Nominal Supply Voltage / Vsup (V): 5

Having a nominal supply voltage of 5V ensures compatibility with standard power supplies, making it easy to integrate the OTP ROM into existing systems.

Temperature Grade: MILITARY

The military temperature grade ensures that the OTP ROM can function reliably in harsh environmental conditions, making it suitable for mission-critical applications.

Technology: CMOS

The CMOS technology offers low power consumption and high noise immunity, making the OTP ROM energy-efficient and reliable for long-term use.

Memory IC Type: OTP ROM

Being an OTP ROM (One-Time Programmable Read-Only Memory) ensures that the data stored in the memory is secure and cannot be altered or erased, enhancing the product's data integrity.

Technical Specifications

OTP ROM JBP18S030MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

50 ns

Input/Output Type:

SEPARATE

JESD-30 Code:

R-GDIP-T16

JESD-609 Code:

e0

Length:

19.56 mm

Memory Density:

256 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

16

No. of Words:

32 words

No. of Words Code:

32

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

32X8

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

5.08 mm

Sub-Category:

OTP ROMs

Maximum Supply Current:

110 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

JBP18S030MJ Memory ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-027-3791, 5962010273791, 5962-01-027-3809, 5962010273809, 5962-01-027-3796, 5962010273796, 5962-01-027-5653, 5962010275653, 5962-01-027-5643, 5962010275643, 5962-01-027-5644, 5962010275644, 5962-01-027-5652, 5962010275652, 5962-01-027-3813, 5962010273813, 5962-01-027-3807, 5962010273807, 5962-01-027-3811, 5962010273811, 5962-01-027-5651, 5962010275651, 5962-01-096-6564, 5962010966564, 5962-01-027-5642, 5962010275642, 5962-01-027-5641, 5962010275641, 5962-01-027-3794, 5962010273794, 5962-01-027-3802, 5962010273802, 5962-01-028-1198, 5962010281198, 5962-01-057-7057, 5962010577057, 5962-01-027-3804, 5962010273804, 5962-01-027-3799, 5962010273799, 5962-01-027-5650, 5962010275650, 5962-01-028-6132, 5962010286132, 5962-01-030-0055, 5962010300055, 5962-01-160-5972, 5962011605972, 5962-01-160-6533, 5962011606533, 5962-01-160-4902, 5962011604902

NIIN

010273791, 010273809, 010273796, 010275653, 010275643, 010275644, 010275652, 010273813, 010273807, 010273811, 010275651, 010966564, 010275642, 010275641, 010273794, 010273802, 010281198, 010577057, 010273804, 010273799, 010275650, 010286132, 010300055, 011605972, 011606533, 011604902

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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