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TBP28L86J

Texas Instruments

TBP28L86J by Texas Instruments

TBP28L86J by Texas Instruments is a 1Kx8 OTP ROM with 8192-bit memory density and 130ns max access time. It operates at a nominal voltage of 5V, suitable for commercial temperature grades. This rectangular ceramic package with 24 terminals is ideal for applications requiring reliable non-volatile memory storage in TTL technology.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,423 parts In-Stock

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6,423

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Digiode

USA . 2,513 parts In-Stock

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2,513

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Prism Electronics

USA . 2 parts In-Stock

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2

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,180 parts In-Stock

1+ parts

$4.187

100+ parts

-

1k+ parts

$4.629

10k+ parts

-

2,180

$4.187

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$4.629

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DigiPath Technology Company

USA . 1,088 parts In-Stock

1+ parts

$4.611

100+ parts

$4.242

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-

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1,088

$4.611

$4.242

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ChromeModa Solutions

Germany . 5,106 parts In-Stock

1+ parts

$4.705

100+ parts

$3.858

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-

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5,106

$4.705

$3.858

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IDEA Electronic Components Group

UK . 813 parts In-Stock

1+ parts

$4.705

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$4.234

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813

$4.705

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$4.234

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One Stop Electronics

USA . 910 parts In-Stock

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$11.000

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910

$11.000

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AZTECH Wire

Italy . 312 parts In-Stock

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$12.813

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312

$12.813

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Corphita

USA . 3,509 parts In-Stock

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Overview

Upgrade your electronics with the top-of-the-line TBP28L86J by Texas Instruments. Known for their superior quality and reliability, Texas Instruments delivers cutting-edge technology in the form of OTP ROM memory chips. With a package style of IN-LINE and 1KX8 organization, this product is perfect for a wide range of applications. Whether you're designing consumer electronics or industrial equipment, the TBP28L86J offers lightning-fast access times and high memory density to optimize performance. Trust Texas Instruments for unmatched value and innovation in every product.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body material provides robust protection and excellent heat dissipation, making this OTP ROM highly durable and reliable for long-term use.

Nominal Supply Voltage / Vsup (V): 5

With a nominal supply voltage of 5V, this OTP ROM can easily integrate into various electronic systems and operate efficiently without requiring additional power conversion.

No. of Words: 1024 words

With a capacity of 1024 words, this OTP ROM offers ample storage space for storing crucial data and program instructions, making it suitable for a wide range of applications.

Technology: TTL

Utilizing TTL technology ensures high-speed data processing and compatibility with TTL logic levels, enhancing the performance and reliability of this OTP ROM in digital systems.

Maximum Access Time: 130 ns

The maximum access time of 130 ns ensures quick retrieval of data from the OTP ROM, improving overall system efficiency and responsiveness.

Technical Specifications

OTP ROM TBP28L86J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

130 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP28L86J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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