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JBP18S22MJ

Texas Instruments

JBP18S22MJ by Texas Instruments

JBP18S22MJ by Texas Instruments is a MILITARY-grade OTP ROM with 256x8 organization, 2048-bit memory density, and 80ns max access time. It operates b/w -55 to 125 °C and has a supply voltage of 5V. Ideal for applications requiring reliable non-volatile memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,639 parts In-Stock

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8,639

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Digiode

USA . 2,432 parts In-Stock

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2,432

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Manoshevitz Elec. Sales

Israel . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,191 parts In-Stock

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$4.000

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$4.000

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Parana Technologies

USA . 1,065 parts In-Stock

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$5.297

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$5.925

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1,065

$5.297

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$5.925

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DigiPath Technology Company

USA . 1,524 parts In-Stock

1+ parts

$5.833

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$5.366

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1,524

$5.833

$5.366

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ChromeModa Solutions

Germany . 2,520 parts In-Stock

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$5.952

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$4.881

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2,520

$5.952

$4.881

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IDEA Electronic Components Group

UK . 412 parts In-Stock

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$5.952

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$5.357

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412

$5.952

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$5.357

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AZTECH Wire

Italy . 219 parts In-Stock

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$19.636

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219

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Corphita

USA . 2,179 parts In-Stock

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2,179

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Overview

Unlock endless possibilities with the JBP18S22MJ by Texas Instruments, a top-tier OTP ROM that guarantees quality and reliability. Designed for military-grade applications, this ceramic-packaged memory IC offers unparalleled performance in extreme temperatures from -55°C to 125°C. Its 256x8 organization provides ample storage capacity, while its fast access time of 80 ns ensures seamless operation. Trust Texas Instruments for cutting-edge technology that delivers value and peace of mind, making the JBP18S22MJ the ideal solution for your mission-critical projects.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package provides durability and reliability for long-term use.

Screening Level: 38535Q/M;38534H;883B

High screening level ensures quality and reliability of the product.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement and packaging within electronic systems.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage requirement makes it compatible with most systems.

Power Supplies (V): 5

Consistent power supply ensures stable performance.

No. of Terminals: 20

Sufficient terminals for connectivity and functionality.

Package Style (Meter): IN-LINE

In-line package style is convenient for installation and space-saving.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows for use in various environments.

Organization: 256X8

Organized memory structure for efficient data storage and retrieval.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures functionality in extreme conditions.

Terminal Position: DUAL

Dual terminal position for enhanced connectivity options.

Temperature Grade: MILITARY

Military-grade temperature tolerance for rugged applications.

Technology: TTL

TTL technology for fast and reliable data processing.

Terminal Form: THROUGH-HOLE

Through-hole terminal form for secure connections.

No. of Words: 256 words

Ample word capacity for data storage.

Memory Width: 8

Memory width of 8 for efficient data handling.

Terminal Pitch: 2.54 mm

Standard terminal pitch for compatibility.

No. of Words Code: 256

Coding for easy identification and integration.

Memory Density: 2048 bit

High memory density for extensive data storage.

Memory IC Type: OTP ROM

One-time programmable read-only memory type for secure data storage.

Maximum Access Time: 80 ns

Fast access time for quick data retrieval.

Technical Specifications

OTP ROM JBP18S22MJ attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

80 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

256 words

No. of Words Code:

256

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

256X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

JBP18S22MJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-205-3339, 5962012053339, 5962-01-119-4703, 5962011194703, 5962-01-273-4254, 5962012734254, 5962-01-273-6754, 5962012736754, 5962-01-273-4255, 5962012734255, 5962-01-245-3447, 5962012453447, 5962-01-273-6755, 5962012736755

NIIN

012053339, 011194703, 012734254, 012736754, 012734255, 012453447, 012736755

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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