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SN54188AW

Texas Instruments

SN54188AW by Texas Instruments

SN54188AW by Texas Instruments is a 32x8 OTP ROM with 50ns access time, operating b/w -55 to 125°C. It has a supply voltage of 5V and max current draw of 110mA. Ideal for military-grade applications requiring fast memory access in a compact flatpack package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,310 parts In-Stock

1+ parts

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2,310

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Digiode

USA . 1,656 parts In-Stock

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1,656

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 708 parts In-Stock

1+ parts

$5.177

100+ parts

-

1k+ parts

$5.779

10k+ parts

-

708

$5.177

-

$5.779

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DigiPath Technology Company

USA . 1,225 parts In-Stock

1+ parts

$5.701

100+ parts

$5.245

1k+ parts

-

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1,225

$5.701

$5.245

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IDEA Electronic Components Group

UK . 1,832 parts In-Stock

1+ parts

$5.817

100+ parts

-

1k+ parts

$5.235

10k+ parts

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1,832

$5.817

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$5.235

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ChromeModa Solutions

Germany . 1,471 parts In-Stock

1+ parts

$5.817

100+ parts

$4.770

1k+ parts

-

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1,471

$5.817

$4.770

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AZTECH Wire

Italy . 788 parts In-Stock

1+ parts

$9.832

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788

$9.832

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One Stop Electronics

USA . 1,241 parts In-Stock

1+ parts

$28.000

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1,241

$28.000

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Corphita

USA . 2,929 parts In-Stock

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2,929

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Overview

Unlock the power of reliable data storage with the SN54188AW by Texas Instruments. Crafted with precision in ceramic material, this OTP ROM offers military-grade technology for secure applications. With a 32X8 organization and lightning-fast access time of 50 ns, this flatpack package delivers top-notch performance at a nominal supply voltage of 5V. Trust Texas Instruments for quality you can count on.

Feature Benefit Bullets

Package Body Material: CERAMIC

The ceramic package body material provides excellent thermal resistance and durability, ensuring optimal performance and longevity of the OTP ROM.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes this OTP ROM compatible with a wide range of electronic systems, offering versatility in usage.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this OTP ROM can withstand elevated temperatures without compromising its performance, suitable for industrial and military applications.

Technology: TTL

Utilizing TTL technology, this OTP ROM ensures reliable and fast data processing, making it a dependable choice for critical applications where speed and accuracy are essential.

Maximum Access Time: 50 ns

The maximum access time of 50 nanoseconds ensures quick retrieval of data from the OTP ROM, enhancing overall system efficiency and responsiveness.

Technical Specifications

OTP ROM SN54188AW attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

50 ns

JESD-30 Code:

R-XDFP-F16

Memory IC Type:

Memory Width:

8

No. of Terminals:

16

No. of Words:

32 words

No. of Words Code:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

32X8

Package Body Material:

CERAMIC

Package Code:

DFP

Package Equivalence Code:

FL16,.3

Package Shape:

Package Style (Meter):

FLATPACK

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Maximum Supply Current:

110 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Trade Compliance

SN54188AW Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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