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SN54S471J

Texas Instruments

SN54S471J by Texas Instruments

SN54S471J by Texas Instruments is a 256x8 OTP ROM with 2048-bit memory density. It operates at 5V, has a max access time of 80ns, and supports MILITARY temperature grade. Ideal for applications requiring fast and reliable non-volatile memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,694 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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7,694

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-

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Digiode

USA . 2,025 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,025

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 760 parts In-Stock

1+ parts

$1.000

100+ parts

-

1k+ parts

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10k+ parts

-

760

$1.000

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-

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Parana Technologies

USA . 1,288 parts In-Stock

1+ parts

$3.524

100+ parts

-

1k+ parts

$4.047

10k+ parts

-

1,288

$3.524

-

$4.047

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DigiPath Technology Company

USA . 168 parts In-Stock

1+ parts

$3.881

100+ parts

$3.570

1k+ parts

-

10k+ parts

-

168

$3.881

$3.570

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IDEA Electronic Components Group

UK . 2,157 parts In-Stock

1+ parts

$3.960

100+ parts

-

1k+ parts

$3.564

10k+ parts

-

2,157

$3.960

-

$3.564

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ChromeModa Solutions

Germany . 1,671 parts In-Stock

1+ parts

$3.960

100+ parts

$3.247

1k+ parts

-

10k+ parts

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1,671

$3.960

$3.247

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AZTECH Wire

Italy . 236 parts In-Stock

1+ parts

$7.317

100+ parts

-

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10k+ parts

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236

$7.317

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Corphita

USA . 2,604 parts In-Stock

1+ parts

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2,604

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Kepictronics

USA . 40 parts In-Stock

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-

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40

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Overview

Unlock the power of reliable data storage with the SN54S471J by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch quality and performance. This OTP ROM device offers unparalleled value with its high memory density and fast access time, making it perfect for military-grade applications where reliability is key. Trust Texas Instruments to provide you with the cutting-edge technology you need to stay ahead in today's competitive market. Elevate your projects with the SN54S471J and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packaging provides excellent protection and durability for the OTP ROM, ensuring long-term reliability and performance.

Nominal Supply Voltage: 5V

Operates at a standard 5V supply voltage, making it compatible with many existing systems and easier to integrate.

Maximum Operating Temperature: 125°C

Can function reliably in high temperature environments, making it suitable for a wide range of applications.

Memory Density: 2048 bit

Offers a high memory density, allowing for storage of a large amount of data in a compact package.

Technology: TTL

Uses TTL technology, which is known for its high speed and reliability, ensuring fast and accurate data retrieval.

Technical Specifications

OTP ROM SN54S471J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

80 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

256 words

No. of Words Code:

256

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

256X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Maximum Supply Current:

155 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SN54S471J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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