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TBP24S81JP4

Texas Instruments

TBP24S81JP4 by Texas Instruments

TBP24S81JP4 by Texas Instruments is a 2Kx4 OTP ROM with 8192-bit memory density and 70ns max access time. It operates b/w 0°C to 70°C, drawing a max supply current of 175mA. Ideal for commercial applications requiring reliable non-volatile memory storage in a ceramic rectangular package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,848 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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7,848

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Digiode

USA . 2,080 parts In-Stock

1+ parts

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2,080

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,089 parts In-Stock

1+ parts

$2.000

100+ parts

-

1k+ parts

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10k+ parts

-

1,089

$2.000

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Parana Technologies

USA . 519 parts In-Stock

1+ parts

$5.333

100+ parts

-

1k+ parts

$5.990

10k+ parts

-

519

$5.333

-

$5.990

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ChromeModa Solutions

Germany . 4,358 parts In-Stock

1+ parts

$5.992

100+ parts

$4.913

1k+ parts

-

10k+ parts

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4,358

$5.992

$4.913

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IDEA Electronic Components Group

UK . 1,973 parts In-Stock

1+ parts

$5.992

100+ parts

-

1k+ parts

$5.393

10k+ parts

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1,973

$5.992

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$5.393

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AZTECH Wire

Italy . 380 parts In-Stock

1+ parts

$10.896

100+ parts

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380

$10.896

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Corphita

USA . 3,547 parts In-Stock

1+ parts

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3,547

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DigiPath Technology Company

USA . 2,067 parts In-Stock

1+ parts

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100+ parts

$5.402

1k+ parts

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2,067

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$5.402

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Overview

Unlock the power of reliable data storage with the TBP24S81JP4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments provides top-quality OTP ROM products like this one, perfect for a wide range of applications. With its 2KX4 organization and 2048 words, this memory IC offers exceptional value and benefits to customers seeking efficient and durable solutions. Trust in Texas Instruments to deliver high-performance products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides durability and reliability, making the product resistant to heat and corrosion.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient utilization of space and easy integration into various electronic systems.

No. of Terminals: 18

Sufficient number of terminals for connectivity with other components, offering versatility in application.

Maximum Operating Temperature: 70 °C

High maximum operating temperature tolerance ensures optimal performance even in challenging environments.

Organization: 2KX4

Organized as 2Kx4, providing a balance between storage capacity and access speed for efficient data retrieval.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature allows for reliable operation in a wide range of temperature conditions.

Technology: TTL

TTL technology offers fast response times and low power consumption, ideal for high-speed applications.

No. of Words: 2048 words

Ample storage capacity with 2048 words for storing program instructions and data.

Memory IC Type: OTP ROM

OTP ROM technology ensures that the memory content is permanent and unchangeable, providing secure data storage.

Technical Specifications

OTP ROM TBP24S81JP4 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-XDIP-T18

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

18

No. of Words:

2048 words

No. of Words Code:

2K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX4

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Sub-Category:

OTP ROMs

Maximum Supply Current:

175 mA

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP24S81JP4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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