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5962-01-214-2161

Texas Instruments

5962-01-214-2161 by Texas Instruments

Texas Instruments' 5962-01-214-2161 is a MILITARY-grade OTP ROM with 512X8 organization, 4096-bit memory density, and 85ns max access time. Ideal for applications requiring reliable non-volatile memory in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,558 parts In-Stock

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3,558

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Digiode

USA . 1,196 parts In-Stock

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1,196

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Distributors (Availability)

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Native Components

USA . 73 parts In-Stock

1+ parts

$0.332

100+ parts

-

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$0.319

73

$0.332

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$0.319

Northwest PG Solutions

USA . 2,259 parts In-Stock

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$0.365

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$0.322

2,259

$0.365

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$0.322

One Stop Electronics

USA . 456 parts In-Stock

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$2.000

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456

$2.000

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Parana Technologies

USA . 2,257 parts In-Stock

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$2.036

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$2.559

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2,257

$2.036

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$2.559

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ChromeModa Solutions

Germany . 4,787 parts In-Stock

1+ parts

$2.288

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$1.876

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4,787

$2.288

$1.876

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IDEA Electronic Components Group

UK . 1,986 parts In-Stock

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$2.288

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$2.059

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1,986

$2.288

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$2.059

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AZTECH Wire

Italy . 590 parts In-Stock

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$15.939

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590

$15.939

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DigiPath Technology Company

USA . 705 parts In-Stock

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$2.063

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$2.063

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Corphita

USA . 471 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the 5962-01-214-2161 OTP ROM by Texas Instruments. Designed with military-grade screening and superior ceramic package material, this memory IC offers unmatched reliability and durability for a wide range of applications. Whether you're in aerospace, defense, or industrial sectors, this product provides optimal performance in extreme conditions. Trust Texas Instruments for quality products that deliver results. Choose the 5962-01-214-2161 for unparalleled value and performance.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package provides excellent thermal conductivity and reliability, ensuring stable performance under various operating conditions.

Screening Level: MIL-STD-883 Class B (Modified)

MIL-STD-883 Class B screening ensures high quality and reliability, meeting stringent military standards for performance and durability.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V allows for compatibility with standard power sources, making integration into existing systems easier.

Organization: 512X8

The 512x8 organization provides a good balance between memory capacity and data width, suitable for various applications requiring moderate storage and processing capabilities.

Temperature Grade: MILITARY

Designed to meet military-grade temperature specifications, ensuring reliable operation in harsh environments and critical mission-critical systems.

Technology: TTL

Using TTL technology offers fast and reliable data transmission, making it suitable for applications requiring high-speed and low-latency communication.

Memory IC Type: OTP ROM

Being a One-Time Programmable Read-Only Memory ensures data security and integrity, preventing unauthorized access or modification of stored information.

Maximum Access Time: 85 ns

With a maximum access time of 85 nanoseconds, this OTP ROM provides quick retrieval of stored data, ensuring responsive performance in real-time applications.

Technical Specifications

OTP ROM 5962-01-214-2161 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-214-2161 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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