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SN74S473NP1

Texas Instruments

SN74S473NP1 by Texas Instruments

SN74S473NP1 by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density and 75ns max access time. It operates b/w 0°C to 70°C, making it suitable for commercial applications requiring reliable non-volatile memory storage in a compact rectangular package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,508 parts In-Stock

1+ parts

-

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6,508

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Digiode

USA . 881 parts In-Stock

1+ parts

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-

1k+ parts

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881

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 248 parts In-Stock

1+ parts

$2.806

100+ parts

-

1k+ parts

$3.291

10k+ parts

-

248

$2.806

-

$3.291

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DigiPath Technology Company

USA . 2,203 parts In-Stock

1+ parts

$3.090

100+ parts

$2.843

1k+ parts

-

10k+ parts

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2,203

$3.090

$2.843

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ChromeModa Solutions

Germany . 6,176 parts In-Stock

1+ parts

$3.153

100+ parts

$2.585

1k+ parts

-

10k+ parts

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6,176

$3.153

$2.585

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IDEA Electronic Components Group

UK . 237 parts In-Stock

1+ parts

$3.153

100+ parts

-

1k+ parts

$2.838

10k+ parts

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237

$3.153

-

$2.838

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AZTECH Wire

Italy . 837 parts In-Stock

1+ parts

$15.934

100+ parts

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10k+ parts

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837

$15.934

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One Stop Electronics

USA . 1,295 parts In-Stock

1+ parts

$26.000

100+ parts

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10k+ parts

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1,295

$26.000

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Corphita

USA . 3,993 parts In-Stock

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3,993

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Overview

Unlock endless possibilities with the SN74S473NP1 by Texas Instruments, a cutting-edge OTP ROM that offers unparalleled quality and reliability. Texas Instruments, a trusted leader in semiconductor manufacturing, ensures top-notch performance in every product they create. This versatile component is ideal for a wide range of applications, providing customers with efficient data storage solutions. Say goodbye to limitations and hello to innovation with the SN74S473NP1, where value meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material for the package body ensures that the OTP ROM is rugged and can withstand harsh operating conditions.

Package Shape: RECTANGULAR

The rectangular package shape provides efficient use of space and makes it easy to integrate the OTP ROM into various electronic devices.

No. of Terminals: 20

Having 20 terminals allows for versatile connectivity options, making it compatible with a wide range of devices and circuit configurations.

Maximum Operating Temperature: 70 °C

The OTP ROM can operate efficiently at temperatures up to 70°C, making it suitable for a variety of applications.

Organization: 512X8

The 512x8 organization of the memory provides ample storage capacity and efficient data retrieval, enhancing the performance of the OTP ROM.

Technology: TTL

The use of TTL technology ensures fast and reliable data processing, making the OTP ROM a high-performance choice for various applications.

Memory Width: 8

With a memory width of 8, the OTP ROM can handle data in 8-bit chunks, enabling efficient data storage and retrieval.

Maximum Access Time: 75 ns

The maximum access time of 75 nanoseconds ensures fast data access and retrieval, making the OTP ROM suitable for applications that require quick response times.

Technical Specifications

OTP ROM SN74S473NP1 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-PDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SN74S473NP1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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