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SN74S188N

Texas Instruments

SN74S188N by Texas Instruments

SN74S188N by Texas Instruments is a 32x8 OTP ROM with 40ns access time, operating at 5V. It has 16 terminals in an in-line package style and uses TTL technology. Ideal for commercial applications requiring non-volatile memory storage with a memory width of 8 bits.

Median Price

$28.760

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 48 parts In-Stock

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$28.760

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Vyrian

USA . 6,349 parts In-Stock

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Digiode

USA . 2,767 parts In-Stock

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MISTER SPROCKETS

USA . 15 parts In-Stock

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Bristol Electronics

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Euro-Tech

UK . 5 parts In-Stock

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Electro Mavin

USA . 5 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 4 parts In-Stock

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Holdelec - ElecDif-Pro

France . 4 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 13 parts In-Stock

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$4.920

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$5.452

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13

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ChromeModa Solutions

Germany . 6,877 parts In-Stock

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$5.528

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$4.533

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IDEA Electronic Components Group

UK . 1,669 parts In-Stock

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$5.528

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$4.975

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AZTECH Wire

Italy . 707 parts In-Stock

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$9.900

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One Stop Electronics

USA . 1,030 parts In-Stock

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$12.000

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Corphita

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DigiPath Technology Company

USA . 1,668 parts In-Stock

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$4.984

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$4.984

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Overview

Unlock the power of reliable data storage with the SN74S188N OTP ROM by Texas Instruments. Built with high-quality materials and cutting-edge technology, this device offers unparalleled performance in a compact package. Ideal for applications requiring secure and permanent data storage, this OTP ROM ensures your information remains safe and accessible whenever you need it. Trust Texas Instruments for superior quality and innovation that delivers value to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, allowing for easy handling and long-lasting performance.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a standardized form factor for easy integration into various electronic systems.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes this product compatible with a wide range of electronic devices and systems.

No. of Terminals: 16

With 16 terminals, this OTP ROM offers ample connectivity options for interfacing with other components in a circuit.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C ensures reliable performance even in demanding environmental conditions.

Technology: TTL

Utilizing TTL technology ensures fast and reliable data transfer, making this OTP ROM suitable for applications that require high-speed operation.

Maximum Access Time: 40 ns

The fast maximum access time of 40 ns ensures quick retrieval of data, making this OTP ROM ideal for time-sensitive applications.

Technical Specifications

OTP ROM SN74S188N attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

40 ns

JESD-30 Code:

R-PDIP-T16

Memory IC Type:

Memory Width:

8

No. of Terminals:

16

No. of Words:

32 words

No. of Words Code:

32

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Maximum Supply Current:

110 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74S188N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-069-9690, 5962010699690, 5962-01-070-4530, 5962010704530, 5962-01-026-2459, 5962010262459, 5962-01-082-4385, 5962010824385, 5962-01-096-8958, 5962010968958, 5962-01-026-6615, 5962010266615, 5962-01-065-4384, 5962010654384, 5962-01-058-4864, 5962010584864

NIIN

010699690, 010704530, 010262459, 010824385, 010968958, 010266615, 010654384, 010584864

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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