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TBP28L42N

Texas Instruments

TBP28L42N by Texas Instruments

TBP28L42N by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density. Operating at 5V, it has a max access time of 95ns and operates in parallel mode. This rectangular package IC is ideal for commercial applications requiring non-volatile memory storage.

Median Price

$16.025

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 2 parts In-Stock

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$12.060

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TEDSS.com

USA . 45 parts In-Stock

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$19.990

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Vyrian

USA . 7,088 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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Digiode

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Prism Electronics

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Mil-Aero Solutions, Inc.

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Bristol Electronics

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Atlantic Semiconductor

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Electronic Expediters

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Standard Data Resources

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MISTER SPROCKETS

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Electro Mavin

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Resion

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Electronics Depot

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LittleDiode

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Parana Technologies

USA . 217 parts In-Stock

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$2.400

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$2.897

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DigiPath Technology Company

USA . 2,306 parts In-Stock

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$2.643

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$2.432

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IDEA Electronic Components Group

UK . 1,059 parts In-Stock

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$2.697

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$2.427

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ChromeModa Solutions

Germany . 846 parts In-Stock

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$2.697

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$2.212

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One Stop Electronics

USA . 282 parts In-Stock

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$9.000

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AZTECH Wire

Italy . 578 parts In-Stock

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Corphita

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Kepictronics

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Perfect Parts

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Assy Fe

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Overview

Unlock the power of reliable memory storage with the TBP28L42N by Texas Instruments. Designed with quality and precision, this OTP ROM offers unparalleled performance in a variety of applications. Texas Instruments, a trusted manufacturer known for its innovative technology, ensures that this product delivers exceptional value and benefits to customers. Whether used in consumer electronics, automotive systems, or industrial equipment, the TBP28L42N provides a seamless solution for your memory storage needs. Upgrade to Texas Instruments for superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the OTP ROM, making it a reliable choice for long-term use.

Operating Mode: ASYNCHRONOUS

The asynchronous operation allows for data to be accessed and processed independently without the need for a clock signal, providing flexibility and efficiency.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage ensures stable and consistent power to the OTP ROM, contributing to reliable performance.

Memory Density: 4096 bit

With a high memory density of 4096 bit, this OTP ROM can store a large amount of data efficiently, making it suitable for various applications.

Maximum Access Time: 95 ns

The fast access time of 95 ns allows for quick retrieval of data from the OTP ROM, enhancing overall system performance.

Technical Specifications

OTP ROM TBP28L42N attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

95 ns

JESD-30 Code:

R-PDIP-T20

Length:

24.325 mm

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

OTP ROMs

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

TBP28L42N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-148-6134, 5962011486134

NIIN

011486134

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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