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SN74S3708N

Texas Instruments

SN74S3708N by Texas Instruments

SN74S3708N by Texas Instruments is a 1KX8 OTP ROM IC with 8192-bit memory density. Operating b/w 0°C to 70°C, it features TTL technology and a rectangular package style with 24 terminals. Ideal for applications requiring non-volatile memory storage in commercial-grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,379 parts In-Stock

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7,379

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Digiode

USA . 342 parts In-Stock

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342

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Distributors (Availability)

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Parana Technologies

USA . 1,850 parts In-Stock

1+ parts

$2.763

100+ parts

-

1k+ parts

$3.248

10k+ parts

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1,850

$2.763

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$3.248

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DigiPath Technology Company

USA . 331 parts In-Stock

1+ parts

$3.042

100+ parts

-

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331

$3.042

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ChromeModa Solutions

Germany . 1,694 parts In-Stock

1+ parts

$3.104

100+ parts

$2.545

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1,694

$3.104

$2.545

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IDEA Electronic Components Group

UK . 330 parts In-Stock

1+ parts

$3.104

100+ parts

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$2.794

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330

$3.104

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$2.794

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AZTECH Wire

Italy . 361 parts In-Stock

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$17.334

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361

$17.334

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One Stop Electronics

USA . 867 parts In-Stock

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$22.000

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867

$22.000

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Corphita

USA . 4,950 parts In-Stock

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Overview

Unlock endless possibilities with the SN74S3708N by Texas Instruments. Known for their superior quality and reliability, Texas Instruments brings you this OTP ROM device that offers unparalleled value and benefits. Perfect for a wide range of applications, this product is designed to meet your needs with its 1KX8 organization and memory density of 8192 bits. Whether you're a hobbyist or a professional, the SN74S3708N is sure to exceed your expectations, making it a must-have in your toolkit. Choose Texas Instruments for innovation you can trust.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, increasing the portability and reliability of the product.

No. of Terminals: 24

Having 24 terminals allows for versatility in connecting the OTP ROM to other components or systems, providing flexibility in usage.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this OTP ROM can withstand high heat conditions, ensuring consistent performance in various environments.

Organization: 1KX8

The 1KX8 organization means that the memory is organized into 1 kilobit words with a width of 8 bits, allowing for efficient and organized data storage and retrieval.

Technology: TTL

Using TTL technology ensures reliable and fast data processing, making this OTP ROM suitable for applications requiring high-speed performance.

Memory Width: 8

With a memory width of 8 bits, this OTP ROM can handle data in 8-bit chunks, making it efficient for processing and storing information.

Terminal Pitch: 2.54 mm

The 2.54 mm terminal pitch allows for easy connections and compatibility with standard electronic components, making integration into existing systems simple.

Memory Density: 8192 bit

With a memory density of 8192 bits, this OTP ROM can store a large amount of data in a compact form, making it suitable for applications requiring ample memory storage.

Technical Specifications

OTP ROM SN74S3708N attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

JESD-30 Code:

R-PDIP-T24

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74S3708N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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