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SN54S475W

Texas Instruments

SN54S475W by Texas Instruments

SN54S475W by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density and 85ns max access time. It operates in a temperature range of -55 to 125°C, making it suitable for military-grade applications requiring fast data retrieval. This TTL technology-based device comes in a ceramic flatpack package with 24 terminals for surface mount installation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,295 parts In-Stock

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3,295

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Digiode

USA . 2,522 parts In-Stock

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2,522

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Distributors (Availability)

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Parana Technologies

USA . 872 parts In-Stock

1+ parts

$2.847

100+ parts

-

1k+ parts

$3.338

10k+ parts

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872

$2.847

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$3.338

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DigiPath Technology Company

USA . 574 parts In-Stock

1+ parts

$3.135

100+ parts

$2.884

1k+ parts

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574

$3.135

$2.884

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ChromeModa Solutions

Germany . 4,552 parts In-Stock

1+ parts

$3.199

100+ parts

$2.623

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4,552

$3.199

$2.623

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IDEA Electronic Components Group

UK . 2,123 parts In-Stock

1+ parts

$3.199

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$2.879

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2,123

$3.199

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$2.879

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One Stop Electronics

USA . 232 parts In-Stock

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$4.000

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232

$4.000

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AZTECH Wire

Italy . 823 parts In-Stock

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$7.122

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823

$7.122

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Corphita

USA . 3,179 parts In-Stock

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3,179

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Overview

Enhance your electronic projects with the SN54S475W by Texas Instruments, a top-quality OTP ROM memory IC that delivers reliable performance and unmatched durability. Manufactured by industry leader Texas Instruments, this product offers exceptional value and benefits to customers looking for a dependable solution for their applications. Whether you're working on military-grade projects or commercial electronics, the SN54S475W's 512x8 organization and fast access time of 85 ns make it a versatile choice for a wide range of uses. Upgrade your designs today with the trusted technology of Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body material provides excellent thermal conductivity and mechanical strength, ensuring high reliability and durability for the OTP ROM.

Surface Mount: YES

Surface mount design allows for easy installation on PCBs, saving space and offering efficient assembly.

Package Shape: RECTANGULAR

Rectangular shape enables easy integration into circuit designs and compatibility with standard PCB layouts.

No. of Terminals: 24

Having 24 terminals allows for a wide range of connectivity options, enhancing versatility and flexibility in system design.

Package Style (Meter): FLATPACK

Flatpack package style offers a compact form factor, ideal for applications where space-saving is essential.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the OTP ROM can withstand harsh environmental conditions and ensure reliable performance.

Organization: 512X8

The 512X8 organization provides a balanced mix of word capacity and memory width, making it suitable for various data storage applications.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures the OTP ROM can function effectively in extreme cold environments without compromising performance.

Terminal Position: DUAL

Dual terminal position offers redundancy and enhanced connection stability, reducing the risk of signal interruptions.

Technology: TTL

TTL technology ensures compatibility with a wide range of digital systems, making the OTP ROM versatile and easily integrable.

Terminal Form: FLAT

Flat terminal form simplifies the installation process and ensures secure connections, contributing to the overall reliability of the OTP ROM.

Maximum Supply Current: 155 mA

The low maximum supply current requirement helps in maintaining power efficiency and reducing heat generation, enhancing the overall performance of the OTP ROM.

No. of Words: 512 words

With 512 words capacity, the OTP ROM can store a significant amount of data, making it suitable for applications requiring large memory storage.

Memory Width: 8

Memory width of 8 bits allows for efficient data processing and retrieval, ensuring high-speed performance of the OTP ROM.

Terminal Pitch: 1.27 mm

Having a terminal pitch of 1.27mm enables easy installation and ensures compatibility with standard PCB layouts, simplifying integration into existing systems.

No. of Words Code: 512

512 words code provides sufficient memory capacity to store program instructions or data, making the OTP ROM suitable for a wide range of applications.

Memory Density: 4096 bit

With a memory density of 4096 bits, the OTP ROM offers ample storage space for data, ensuring efficient data management and processing.

Memory IC Type: OTP ROM

Being an OTP ROM, the memory content is programmed only once, making it ideal for applications requiring secure and non-volatile data storage.

Maximum Access Time: 85 ns

The low maximum access time ensures fast data retrieval and processing, enhancing the overall speed and efficiency of the OTP ROM.

Technical Specifications

OTP ROM SN54S475W attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-XDFP-F24

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DFP

Package Equivalence Code:

FL24,.4

Package Shape:

Package Style (Meter):

FLATPACK

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Maximum Supply Current:

155 mA

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Trade Compliance

SN54S475W Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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