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SN54S472J

Texas Instruments

SN54S472J by Texas Instruments

SN54S472J by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density. It operates at a supply voltage of 5V, has a max access time of 85ns, and supports TTL technology. This military-grade IC is ideal for applications requiring fast and reliable non-volatile memory storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,479 parts In-Stock

1+ parts

-

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3,479

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Digiode

USA . 1,203 parts In-Stock

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1,203

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,117 parts In-Stock

1+ parts

$1.930

100+ parts

-

1k+ parts

$2.465

10k+ parts

-

2,117

$1.930

-

$2.465

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DigiPath Technology Company

USA . 1,106 parts In-Stock

1+ parts

$2.125

100+ parts

$1.955

1k+ parts

-

10k+ parts

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1,106

$2.125

$1.955

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ChromeModa Solutions

Germany . 2,023 parts In-Stock

1+ parts

$2.168

100+ parts

$1.778

1k+ parts

-

10k+ parts

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2,023

$2.168

$1.778

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IDEA Electronic Components Group

UK . 1,303 parts In-Stock

1+ parts

$2.168

100+ parts

-

1k+ parts

$1.951

10k+ parts

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1,303

$2.168

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$1.951

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AZTECH Wire

Italy . 656 parts In-Stock

1+ parts

$15.184

100+ parts

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656

$15.184

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One Stop Electronics

USA . 643 parts In-Stock

1+ parts

$27.000

100+ parts

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643

$27.000

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Corphita

USA . 3,969 parts In-Stock

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3,969

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Overview

Discover the superior quality and reliability of the SN54S472J from Texas Instruments, a leading manufacturer in the industry. This OTP ROM offers a wide range of applications with its advanced technology and military-grade temperature grade. With a memory density of 4096 bit and fast access time of 85 ns, this product provides exceptional value and benefits to customers looking for high-performance solutions. Trust Texas Instruments for top-notch products that exceed expectations in every way.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packaging provides excellent protection to the internal components, ensuring durability and long-term reliability.

Nominal Supply Voltage / Vsup (V): 5

Operates on a common supply voltage, making it compatible with many systems and easy to integrate.

Maximum Operating Temperature: 125 °C

Capable of withstanding high temperatures, ideal for applications that require reliable performance in challenging environments.

Organization: 512X8

Offers a good balance of storage capacity and data width, suitable for various storage and retrieval needs.

Technology: TTL

TTL technology provides fast and reliable data transfer, making it suitable for high-speed applications.

Memory Density: 4096 bit

Provides ample storage capacity for data, allowing for efficient processing and retrieval of information.

Memory IC Type: OTP ROM

OTP ROM offers non-volatile memory storage, ensuring that data is retained even when power is removed.

Maximum Access Time: 85 ns

Low access time ensures quick retrieval of data, making it suitable for time-sensitive applications.

Technical Specifications

OTP ROM SN54S472J attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

85 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SN54S472J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-134-4973, 5962011344973, 5962-01-180-4314, 5962011804314, 5962-01-127-7866, 5962011277866

NIIN

011344973, 011804314, 011277866

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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