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SN74S472N3

Texas Instruments

SN74S472N3 by Texas Instruments

SN74S472N3 by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density. Operating at 5V, it has a max access time of 75ns and operates in commercial temperature grades. This rectangular package with 20 terminals is ideal for applications requiring non-volatile memory storage in TTL technology environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,509 parts In-Stock

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7,509

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Digiode

USA . 4,293 parts In-Stock

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4,293

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,300 parts In-Stock

1+ parts

$3.926

100+ parts

-

1k+ parts

$4.398

10k+ parts

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2,300

$3.926

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$4.398

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DigiPath Technology Company

USA . 1,845 parts In-Stock

1+ parts

$4.323

100+ parts

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1,845

$4.323

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ChromeModa Solutions

Germany . 2,857 parts In-Stock

1+ parts

$4.411

100+ parts

$3.617

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2,857

$4.411

$3.617

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IDEA Electronic Components Group

UK . 2,114 parts In-Stock

1+ parts

$4.411

100+ parts

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1k+ parts

$3.970

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2,114

$4.411

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$3.970

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AZTECH Wire

Italy . 683 parts In-Stock

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$18.441

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683

$18.441

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One Stop Electronics

USA . 1,588 parts In-Stock

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$25.000

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1,588

$25.000

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Corphita

USA . 1,729 parts In-Stock

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1,729

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Overview

Unlock endless possibilities with the SN74S472N3 by Texas Instruments, a top-of-the-line OTP ROM that guarantees unrivaled quality and reliability. Designed by industry leaders, this product offers seamless integration and unparalleled performance in various applications. With a commitment to innovation, Texas Instruments delivers cutting-edge technology that exceeds customer expectations. Experience the value of precision engineering and unleash the full potential of your projects with the SN74S472N3. Upgrade your systems today and witness the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the internal components of the OTP ROM, ensuring it can withstand various environmental conditions.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes this OTP ROM compatible with a wide range of devices and systems, ensuring easy integration.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this OTP ROM can function reliably in industrial and commercial settings without overheating.

Technology: TTL

Utilizing TTL technology ensures fast and reliable data processing and communication, making this OTP ROM suitable for applications that demand high performance.

Memory Density: 4096 bit

With a memory density of 4096 bits, this OTP ROM offers ample storage capacity for storing critical data and program codes, making it a versatile choice for various applications.

Technical Specifications

OTP ROM SN74S472N3 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-PDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SN74S472N3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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