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TBP18S46N1

Texas Instruments

TBP18S46N1 by Texas Instruments

TBP18S46N1 by Texas Instruments is a 512x8 OTP ROM with memory density of 4096 bit. It operates at 5V, has a max access time of 75ns, and features TTL technology. This rectangular package with 24 terminals is ideal for commercial applications requiring non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,142 parts In-Stock

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Digiode

USA . 1,782 parts In-Stock

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1,782

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Distributors (Availability)

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Parana Technologies

USA . 1,480 parts In-Stock

1+ parts

$4.486

100+ parts

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$4.924

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1,480

$4.486

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$4.924

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DigiPath Technology Company

USA . 574 parts In-Stock

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$4.940

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574

$4.940

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ChromeModa Solutions

Germany . 6,232 parts In-Stock

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$5.041

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$4.134

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6,232

$5.041

$4.134

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IDEA Electronic Components Group

UK . 1,777 parts In-Stock

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$5.041

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$4.537

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$5.041

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$4.537

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AZTECH Wire

Italy . 335 parts In-Stock

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$6.605

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335

$6.605

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One Stop Electronics

USA . 1,548 parts In-Stock

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$28.000

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1,548

$28.000

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Corphita

USA . 2,924 parts In-Stock

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Overview

Unlock the power of reliable data storage with the TBP18S46N1 by Texas Instruments. Known for their industry-leading quality and innovation, Texas Instruments delivers a high-performance OTP ROM chip that guarantees secure and efficient data storage solutions. Ideal for a wide range of applications, this product offers customers unparalleled value, benefits, and advantages. Trust Texas Instruments to provide you with top-of-the-line technology that meets all your data storage needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and protection to the OTP ROM, making it suitable for rugged environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources and facilitates easy integration into existing systems.

No. of Terminals: 24

The OTP ROM with 24 terminals offers ample connectivity options for interfacing with other components or devices.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this OTP ROM can function reliably in a wide range of environmental conditions.

Organization: 512X8

The 512x8 organization ensures efficient memory management and retrieval of data, suitable for various applications requiring storage and retrieval of information.

Technology: TTL

Utilizing TTL technology provides high-speed operation and reliable performance, making it a preferred choice for applications where timing and accuracy are critical.

Maximum Supply Current: 155 mA

The maximum supply current of 155 mA indicates low power consumption, which is essential for energy-efficient designs and prolonging the lifespan of the device.

Memory Width: 8

An 8-bit memory width allows for storing and retrieving data in chunks of 8 bits, enabling efficient processing and manipulation of information within the OTP ROM.

Memory IC Type: OTP ROM

Being an OTP ROM (One-Time Programmable Read-Only Memory) ensures that the data stored in the memory is non-volatile and remains intact even when the power is turned off, offering secure storage solutions.

Maximum Access Time: 75 ns

The maximum access time of 75 ns signifies quick data retrieval and processing, ideal for applications that demand high-speed operation and low latency.

Technical Specifications

OTP ROM TBP18S46N1 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-PDIP-T24

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Maximum Supply Current:

155 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TBP18S46N1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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