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TBP24S81N

Texas Instruments

TBP24S81N by Texas Instruments

TBP24S81N by Texas Instruments is a 2KX4 OTP ROM with 8192 bit memory density. Operating at 5V, it has a max access time of 70ns and consumes up to 175mA. Ideal for commercial applications requiring fast parallel data retrieval in a compact IN-LINE package style.

Median Price

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Lifecycle Status

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9

In-Stock Inventory

1k+

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Vyrian

USA . 5,634 parts In-Stock

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Digiode

USA . 3,747 parts In-Stock

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Electronic Expediters

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Holdelec - ElecDif-Pro

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Fibra_Brandt Electronic GMBH

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R&J Components

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Sogenti Electronics

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Standard Data Resources

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MRC Electronics

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Parana Technologies

USA . 2,194 parts In-Stock

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$5.955

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DigiPath Technology Company

USA . 1,263 parts In-Stock

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$5.851

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IDEA Electronic Components Group

UK . 1,684 parts In-Stock

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ChromeModa Solutions

Germany . 494 parts In-Stock

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AZTECH Wire

Italy . 567 parts In-Stock

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One Stop Electronics

USA . 1,040 parts In-Stock

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Corphita

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Overview

Unlock the power of reliable and high-quality memory solutions with the TBP24S81N by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments offers top-of-the-line OTP ROM technology that ensures optimal performance and durability for your applications. Whether you're in need of secure data storage, firmware updates, or program code storage, this versatile product provides 2048 words of memory density and a fast access time of 70 ns. Trust Texas Instruments to deliver exceptional value and benefits to meet all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material which is ideal for protecting the internal components of the OTP ROM chip.

Operating Mode: ASYNCHRONOUS

Allows for independent input and output operations, providing flexibility in data access.

Nominal Supply Voltage (V): 5

Standard voltage requirement which makes it compatible with most systems and power sources.

Technology: BIPOLAR

Reliable and well-established technology known for its stability and performance in memory applications.

Maximum Access Time: 70 ns

Fast access time ensures quick retrieval of data, making the OTP ROM chip efficient in processing information.

Technical Specifications

OTP ROM TBP24S81N attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

R-PDIP-T18

Length:

22.48 mm

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

18

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX4

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

OTP ROMs

Maximum Supply Current:

175 mA

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

TBP24S81N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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