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5962-01-205-3339

Texas Instruments

5962-01-205-3339 by Texas Instruments

Texas Instruments' 5962-01-205-3339 is a MILITARY-grade OTP ROM with 256X8 organization, 2048-bit memory density, and 80ns max access time. Ideal for applications requiring reliable non-volatile memory in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,891 parts In-Stock

1+ parts

-

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7,891

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Digiode

USA . 564 parts In-Stock

1+ parts

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564

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 669 parts In-Stock

1+ parts

$0.533

100+ parts

-

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669

$0.533

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Northwest PG Solutions

USA . 2 parts In-Stock

1+ parts

$0.586

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-

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2

$0.586

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Parana Technologies

USA . 1,181 parts In-Stock

1+ parts

$2.132

100+ parts

-

1k+ parts

$2.644

10k+ parts

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1,181

$2.132

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$2.644

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DigiPath Technology Company

USA . 1,733 parts In-Stock

1+ parts

$2.347

100+ parts

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1,733

$2.347

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IDEA Electronic Components Group

UK . 2,252 parts In-Stock

1+ parts

$2.395

100+ parts

-

1k+ parts

$2.156

10k+ parts

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2,252

$2.395

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$2.156

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ChromeModa Solutions

Germany . 2,101 parts In-Stock

1+ parts

$2.395

100+ parts

$1.964

1k+ parts

-

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2,101

$2.395

$1.964

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AZTECH Wire

Italy . 730 parts In-Stock

1+ parts

$15.595

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730

$15.595

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One Stop Electronics

USA . 1,020 parts In-Stock

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$29.000

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1,020

$29.000

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Corphita

USA . 1,136 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the 5962-01-205-3339 by Texas Instruments. Crafted with precision and expertise, this OTP ROM offers unparalleled quality and reliability for a wide range of applications. From military-grade systems to industrial machinery, this product delivers exceptional performance and value, ensuring seamless operation and efficiency. Trust in Texas Instruments to provide you with the tools you need to elevate your projects to new heights. Elevate your work with the 5962-01-205-3339 by Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent thermal resistance, making this OTP ROM suitable for operation in a wide range of temperatures.

Nominal Supply Voltage / Vsup (V): 5

With a nominal supply voltage of 5V, this OTP ROM is compatible with standard voltage levels in many electronic systems.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C ensures reliable performance even in harsh environmental conditions.

Organization: 256X8

The 256X8 organization means this OTP ROM has a capacity to store 256 words of 8 bits each, providing ample storage for firmware or configuration data.

Technology: TTL

TTL technology offers fast switching speeds and low power consumption, making this OTP ROM an efficient and high-performance choice.

Memory Density: 2048 bit

With a memory density of 2048 bits, this OTP ROM can store a significant amount of data in a compact form factor.

Memory IC Type: OTP ROM

As an OTP ROM (One-Time Programmable Read-Only Memory), this IC offers secure and non-volatile storage of data, ideal for applications where data integrity is crucial.

Maximum Access Time: 80 ns

The fast maximum access time of 80 nanoseconds ensures quick retrieval of data, making this OTP ROM suitable for applications requiring rapid access to stored information.

Technical Specifications

OTP ROM 5962-01-205-3339 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

80 ns

JESD-30 Code:

R-XDIP-T20

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

256 words

No. of Words Code:

256

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

256X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-205-3339 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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